Inventor
JANG WEN-YUEH
TW39 patents
⚠️ This page may combine multiple inventors who share the name “JANG WEN-YUEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WINBOND ELECTRONICS CORP
31 patentsUS5439839AAug 8, 1995
Self-aligned source/drain MOS process
WINBOND ELECTRONICS CORP198 citations99
US6946702B2Sep 20, 2005
Resistance random access memory
WINBOND ELECTRONICS CORP85 citations98
US6720611B2Apr 13, 2004
Fabrication method for flash memory
WINBOND ELECTRONICS CORP47 citations96
US5910018AJun 8, 1999
Trench edge rounding method and structure for trench isolation
WINBOND ELECTRONICS CORP66 citations96
US5438005AAug 1, 1995
Deep collection guard ring
WINBOND ELECTRONICS CORP55 citations96
US6649979B2Nov 18, 2003
Method of manufacturing MOSFET and structure thereof
WINBOND ELECTRONICS CORP21 citations92
US6489646B1Dec 3, 2002
DRAM cells with buried trench capacitors
WINBOND ELECTRONICS CORP22 citations92
US6177325B1Jan 23, 2001
Self-aligned emitter and base BJT process and structure
WINBOND ELECTRONICS CORP20 citations92
US5654212AAug 5, 1997
Method for making a variable length LDD spacer structure
WINBOND ELECTRONICS CORP29 citations92
US5508224AApr 16, 1996
Method of making ESD protection device
WINBOND ELECTRONICS CORP34 citations92
US5267194ANov 30, 1993
Electrically erasable programmable read-only-memory cell with side-wall floating gate
WINBOND ELECTRONICS CORP43 citations92
US6730957B1May 4, 2004
Non-volatile memory compatible with logic devices and fabrication method thereof
WINBOND ELECTRONICS CORP17 citations84
US6686243B2Feb 3, 2004
Fabrication method for flash memory
WINBOND ELECTRONICS CORP15 citations84
US6587396B1Jul 1, 2003
Structure of horizontal surrounding gate flash memory cell
WINBOND ELECTRONICS CORP15 citations84
US9012880B2Apr 21, 2015
Resistance memory device
WINBOND ELECTRONICS CORP8 citations83
US5545910AAug 13, 1996
ESD proctection device
WINBOND ELECTRONICS CORP17 citations82
US6933187B2Aug 23, 2005
Method for forming narrow trench structures
WINBOND ELECTRONICS CORP7 citations74
US6784477B2Aug 31, 2004
Structure of a deep trench-type DRAM
WINBOND ELECTRONICS CORP10 citations74
US6720218B2Apr 13, 2004
Method for manufacturing horizontal surrounding gate flash memory cell
WINBOND ELECTRONICS CORP9 citations74
US6661044B2Dec 9, 2003
Method of manufacturing MOSEFT and structure thereof
WINBOND ELECTRONICS CORP10 citations74
US5670822ASep 23, 1997
CMOS process compatible self-alignment lateral bipolar junction transistor
WINBOND ELECTRONICS CORP6 citations74
US5501991AMar 26, 1996
Process for making a bipolar junction transistor with a self-aligned base contact
WINBOND ELECTRONICS CORP8 citations74
US5444004AAug 22, 1995
CMOS process compatible self-alignment lateral bipolar junction transistor
WINBOND ELECTRONICS CORP13 citations74
US9076797B2Jul 7, 2015
3D memory array
WINBOND ELECTRONICS CORP2 citations63
US7332390B2Feb 19, 2008
Semiconductor memory device and fabrication thereof
WINBOND ELECTRONICS CORP3 citations63
US7060572B2Jun 13, 2006
MOSFET with short channel structure and formation method thereof
WINBOND ELECTRONICS CORP6 citations63
US9203020B2Dec 1, 2015
Resistance memory device
WINBOND ELECTRONICS CORP2 citations61
US9966530B2May 8, 2018
Resistive random access memory device and method for fabricating the same
WINBOND ELECTRONICS CORP1 citations52
US9728720B2Aug 8, 2017
Resistive random access memory device and method for fabricating the same
WINBOND ELECTRONICS CORP0 citations52
US8999781B2Apr 7, 2015
Method for fabricating semiconductor device
WINBOND ELECTRONICS CORP0 citations52
US7463524B2Dec 9, 2008
Reading and writing method for non-volatile memory with multiple data states
WINBOND ELECTRONICS CORP0 citations52
POWERCHIP SEMICONDUCTOR MFG CORP
3 patentsUS11257830B2Feb 22, 2022
Memory structure
POWERCHIP SEMICONDUCTOR MFG CORP0 citations62
US10896910B2Jan 19, 2021
Memory structure and manufacturing method thereof
POWERCHIP SEMICONDUCTOR MFG CORP0 citations62
US10868196B2Dec 15, 2020
Memory device and manufacturing method thereof
POWERCHIP SEMICONDUCTOR MFG CORP0 citations42