P

Inventor

JANG WEN-YUEH

TW39 patents
⚠️ This page may combine multiple inventors who share the name “JANG WEN-YUEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WINBOND ELECTRONICS CORP

31 patents
US5439839AAug 8, 1995

Self-aligned source/drain MOS process

WINBOND ELECTRONICS CORP198 citations99
US6946702B2Sep 20, 2005

Resistance random access memory

WINBOND ELECTRONICS CORP85 citations98
US6720611B2Apr 13, 2004

Fabrication method for flash memory

WINBOND ELECTRONICS CORP47 citations96
US5910018AJun 8, 1999

Trench edge rounding method and structure for trench isolation

WINBOND ELECTRONICS CORP66 citations96
US5438005AAug 1, 1995

Deep collection guard ring

WINBOND ELECTRONICS CORP55 citations96
US6649979B2Nov 18, 2003

Method of manufacturing MOSFET and structure thereof

WINBOND ELECTRONICS CORP21 citations92
US6489646B1Dec 3, 2002

DRAM cells with buried trench capacitors

WINBOND ELECTRONICS CORP22 citations92
US6177325B1Jan 23, 2001

Self-aligned emitter and base BJT process and structure

WINBOND ELECTRONICS CORP20 citations92
US5654212AAug 5, 1997

Method for making a variable length LDD spacer structure

WINBOND ELECTRONICS CORP29 citations92
US5508224AApr 16, 1996

Method of making ESD protection device

WINBOND ELECTRONICS CORP34 citations92
US5267194ANov 30, 1993

Electrically erasable programmable read-only-memory cell with side-wall floating gate

WINBOND ELECTRONICS CORP43 citations92
US6730957B1May 4, 2004

Non-volatile memory compatible with logic devices and fabrication method thereof

WINBOND ELECTRONICS CORP17 citations84
US6686243B2Feb 3, 2004

Fabrication method for flash memory

WINBOND ELECTRONICS CORP15 citations84
US6587396B1Jul 1, 2003

Structure of horizontal surrounding gate flash memory cell

WINBOND ELECTRONICS CORP15 citations84
US9012880B2Apr 21, 2015

Resistance memory device

WINBOND ELECTRONICS CORP8 citations83
US5545910AAug 13, 1996

ESD proctection device

WINBOND ELECTRONICS CORP17 citations82
US6933187B2Aug 23, 2005

Method for forming narrow trench structures

WINBOND ELECTRONICS CORP7 citations74
US6784477B2Aug 31, 2004

Structure of a deep trench-type DRAM

WINBOND ELECTRONICS CORP10 citations74
US6720218B2Apr 13, 2004

Method for manufacturing horizontal surrounding gate flash memory cell

WINBOND ELECTRONICS CORP9 citations74
US6661044B2Dec 9, 2003

Method of manufacturing MOSEFT and structure thereof

WINBOND ELECTRONICS CORP10 citations74
US5670822ASep 23, 1997

CMOS process compatible self-alignment lateral bipolar junction transistor

WINBOND ELECTRONICS CORP6 citations74
US5501991AMar 26, 1996

Process for making a bipolar junction transistor with a self-aligned base contact

WINBOND ELECTRONICS CORP8 citations74
US5444004AAug 22, 1995

CMOS process compatible self-alignment lateral bipolar junction transistor

WINBOND ELECTRONICS CORP13 citations74
US9076797B2Jul 7, 2015

3D memory array

WINBOND ELECTRONICS CORP2 citations63
US7332390B2Feb 19, 2008

Semiconductor memory device and fabrication thereof

WINBOND ELECTRONICS CORP3 citations63
US7060572B2Jun 13, 2006

MOSFET with short channel structure and formation method thereof

WINBOND ELECTRONICS CORP6 citations63
US9203020B2Dec 1, 2015

Resistance memory device

WINBOND ELECTRONICS CORP2 citations61
US9966530B2May 8, 2018

Resistive random access memory device and method for fabricating the same

WINBOND ELECTRONICS CORP1 citations52
US9728720B2Aug 8, 2017

Resistive random access memory device and method for fabricating the same

WINBOND ELECTRONICS CORP0 citations52
US8999781B2Apr 7, 2015

Method for fabricating semiconductor device

WINBOND ELECTRONICS CORP0 citations52
US7463524B2Dec 9, 2008

Reading and writing method for non-volatile memory with multiple data states

WINBOND ELECTRONICS CORP0 citations52

POWERCHIP SEMICONDUCTOR MFG CORP

3 patents

WINDBOND ELECTRONICS CORP

2 patents

JANG WEN-YUEH

2 patents

WINBOND ELECTRONIC CORP

1 patent