Inventor
PHELPS RICHARD A
US54 patents
⚠️ This page may combine multiple inventors who share the name “PHELPS RICHARD A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
21 patentsUS7943445B2May 17, 2011
Asymmetric junction field effect transistor
IBM16 citations92
US7977714B2Jul 12, 2011
Wrapped gate junction field effect transistor
IBM7 citations84
US7825441B2Nov 2, 2010
Junction field effect transistor with a hyperabrupt junction
IBM16 citations84
US7670889B2Mar 2, 2010
Structure and method for fabrication JFET in CMOS
IBM12 citations84
US7205591B2Apr 17, 2007
Pixel sensor cell having reduced pinning layer barrier potential and method thereof
IBM6 citations74
US7384878B2Jun 10, 2008
Method for applying a layer to a hydrophobic surface
IBM6 citations68
US9059276B2Jun 16, 2015
High voltage laterally diffused metal oxide semiconductor
IBM3 citations63
US8809155B2Aug 19, 2014
Back-end-of-line metal-oxide-semiconductor varactors
IBM3 citations63
US8709903B2Apr 29, 2014
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure
IBM1 citations63
US7459360B2Dec 2, 2008
Method of forming pixel sensor cell having reduced pinning layer barrier potential
IBM4 citations63
US8828746B2Sep 9, 2014
Compensation for a charge in a silicon substrate
IBM2 citations61
US6968288B2Nov 22, 2005
Method for detection of photolithographic defocus
IBM5 citations57
US9034712B2May 19, 2015
Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage
IBM1 citations52
US8946799B2Feb 3, 2015
Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
IBM1 citations52
US8921172B2Dec 30, 2014
Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure
IBM0 citations52
US8796108B2Aug 5, 2014
Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode
IBM0 citations52
US8779476B2Jul 15, 2014
Asymmetric wedge JFET, related method and design structure
IBM0 citations52
US8564067B2Oct 22, 2013
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure
IBM0 citations52
US7902606B2Mar 8, 2011
Double gate depletion mode MOSFET
IBM0 citations52
US7791105B2Sep 7, 2010
Device structures for a high voltage junction field effect transistor manufactured using a hybrid orientation technology wafer and design structures for a high voltage integrated circuit
IBM0 citations52
US9383404B2Jul 5, 2016
High resistivity substrate final resistance test structure
IBM1 citations51
CHIVAS PRODUCTS
10 patentsUS4955571ASep 11, 1990
Dual action cupholder
CHIVAS PRODUCTS60 citations95
US5060899AOct 29, 1991
Nested container holders
CHIVAS PRODUCTS136 citations94
US4928865AMay 29, 1990
Bilateral beverage container holder
CHIVAS PRODUCTS83 citations94
US5261716ANov 16, 1993
Vehicle door pocket
CHIVAS PRODUCTS39 citations92
US5062608ANov 5, 1991
Visor mount
CHIVAS PRODUCTS38 citations92
US4907775AMar 13, 1990
Container holder
CHIVAS PRODUCTS41 citations92
US4686741AAug 18, 1987
Padded automotive casket handle
CHIVAS PRODUCTS38 citations90
US5326417AJul 5, 1994
Method and apparatus for producing trim panels
CHIVAS PRODUCTS16 citations82
US4794668AJan 3, 1989
Assist strap termination structure
CHIVAS PRODUCTS19 citations73
US5635003AJun 3, 1997
Cold sealing process for soft trim products
CHIVAS PRODUCTS3 citations63
BOTULA ALAN B
4 patentsUS8748285B2Jun 10, 2014
Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate
BOTULA ALAN B5 citations73
US8698244B2Apr 15, 2014
Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method
BOTULA ALAN B4 citations73
US8471340B2Jun 25, 2013
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure
BOTULA ALAN B4 citations63
US8536035B2Sep 17, 2013
Silicon-on-insulator substrate and method of forming
BOTULA ALAN B2 citations60
GLOBALFOUNDRIES INC
3 patentsUS9761525B1Sep 12, 2017
Multiple back gate transistor
GLOBALFOUNDRIES INC10 citations84
US9755015B1Sep 5, 2017
Air gaps formed by porous silicon removal
GLOBALFOUNDRIES INC6 citations73
US9595579B2Mar 14, 2017
Dual shallow trench isolation (STI) structure for field effect transistor (FET)
GLOBALFOUNDRIES INC0 citations52
ANDERSON FREDERICK G
2 patentsCAMILLO-CASTILLO RENATA
2 patentsLIU XUEFENG
2 patentsGRECO JOSEPH R
1 patentBECKER GROUP INC
1 patentCAMPI JOHN B
1 patentHERSHBERGER DOUGLAS B
1 patentDEMUYNCK DAVID A
1 patentCAMILLO-CASTILLO RENATA A
1 patentShowing the top 50 of 54 patents by PatentIndex Score.