Inventor

KIM CHAN-KYUNG

KR51 patents

⚠️ This page may combine multiple inventors who share the name “KIM CHAN-KYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM CHAN-KYUNG

SAMSUNG ELECTRONICS CO LTD

Temperature sensing circuit and method

Spin transfer torque magnetic random access memory for supporting operational modes with mode register

Temperature sensor using ring oscillator and temperature detection method using the same

Duty cycle correction circuit and duty cycle correction method

Semiconductor package

Quadrature-phase voltage controlled oscillator

Output driver circuit with automatic slew rate control and slew rate control method using the same

Memory module, memory device, and processing device having a processor mode, and memory system

Spin transfer torque magnetic random access memory for supporting operational modes with mode register

Semiconductor memory device which compensates for delay time variations of multi-bit data

Memory device for compensating for a clock skew causing a centering error and a method for compensating for the clock skew

Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit

Method of reconfiguring DQ pads of memory device and DQ pad reconfigurable memory device

Resistive memory device, memory system including the same and method of reading data from the same

Memory device supporting skip calculation mode and method of operating the same

Circuit for reducing duty distortion in a semiconductor memory device

Voltage-controlled oscillator, phase-locked loop, and memory device

Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit

Temperature sensor for generating sectional temperature code and sectional temperature detection method

Memory devices having single bit bus structure with current mode signaling and methods of operating same

Delayed tap signal generating circuit for controlling delay by interpolating two input clocks

Resistive memory device and method for reading data in the resistive memory device

Memory module, memory device, and processing device having a processor mode, and memory system

Semiconductor package

Magnetic junction memory device and writing method thereof

Magnetic junction memory device and writing method thereof

Magnetic junction memory device and reading method thereof

Magnetic junction memory device and reading method thereof

On-chip resistance measurement circuit and resistive memory device including the same

Common source semiconductor memory device

Semiconductor memory device which compensates for delay time variations of multi-bit data

Low power consumption semiconductor memory device capable of selectively changing input/output data width and data input/output method

Output driver circuit with pre-emphasis function

Memory device including arithmetic circuit and neural network system including the same

Multi-functional logic gate device and programmable integrated circuit device using the same

Multi-functional logic gate device and programmable integrated circuit device using the same

KIM CHAN-KYUNG

Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters

Memory device, method of performing read or write operation and memory system including the same

Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device

Memory cores of resistive type memory devices, resistive type memory devices and method of sensing data in the same

Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit

Oscillator, oscillator implementations and method of generating an osciallating signal

Signal transceiver for differential data communication of ternary data and method therefor

Oscillator, oscillator implementations and method of generating an oscillating signal

YOUN YONGSIK

Sense amplifier circuitry for resistive type memory

Sense amplifier circuitry for resistive type memory

Write driver in sense amplifier for resistive type memory

LEE YUN-SANG

Semiconductor memory devices for alternately selecting bit lines

SOHN DONG HYUN

Memory system having variable operating voltage and related method of operation

KIM CHAN KYUNG

Semiconductor devices having separate source line structure