Inventor

BRIGHTSKY MATTHEW J

US39 patents

⚠️ This page may combine multiple inventors who share the name “BRIGHTSKY MATTHEW J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BRIGHTSKY MATTHEW J

IBM

Stackable cross-point phase-change material memory array with a resistive liner

Reliable physical unclonable function for device authentication

Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Phase change memory cell with large electrode contact area

Phase change memory cell with large electrode contact area

Phase change memory cell with large electrode contact area

Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Crosspoint fill-in memory cell with etched access device

Integrated reactive material erasure element with phase change memory

Phase change memory array with integrated polycrystalline diodes

Integrated arming switch and arming switch activation layer for secure memory

Symmetrical bipolar junction transistor array

Reliable physical unclonable function for device authentication

Phase change storage device with multiple serially connected storage regions

Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium

Phase change memory cell with heat shield

Thermally insulated phase change material cells

Integrated reactive material erasure element with phase change memory

Phase change memory array with integrated polycrystalline diodes

Resistive memory with a stabilizer

Resistive memory with a stabilizer

Crosspoint phase change memory with crystallized silicon diode access device

Tone inversion integration for phase change memory

Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays

Crosspoint fill-in memory cell with etched access device

Phase change memory cell with heat shield

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Tone inversion integration for phase change memory

BRIGHTSKY MATTHEW J

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Approach for phase change memory cells targeting different device specifications

MACRONIX INT CO LTD

Phase change memory with high endurance

3D phase change memory with high endurance

GLOBALFOUNDRIES INC

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor