Resistive memory with a stabilizer

Abstract

A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element.

What is claimed is: 
     
       1. A method for fabricating a memory device comprising:
 forming a first electrode within a substrate; 
 forming an insulating region defining a via, the via having a T-shaped cross-sectional area; 
 forming a non-programmable stabilizer element proximate the first electrode, the stabilizer element lining the via and is in electrical contact with the first electrode; 
 forming a resistive memory element positioned within the via and proximate the first electrode, wherein the resistive memory element is in physical contact with the first electrode and the stabilizer element, the resistive memory element having the T-shaped cross-sectional area and is programmable to a crystalline phase and an amorphous phase; and 
 wherein at least one physical dimension of the stabilizer element is based on an amorphous volume of the resistive memory element in the amorphous phase such that the maximum resistance of the stabilizer element is less than the maximum resistance of the resistive memory element. 
 
     
     
       2. The method of  claim 1 , further comprising:
 forming an insulating region over the first electrode and substrate, the insulating layer including a via directly above the first electrode. 
 
     
     
       3. The method of  claim 2 , wherein forming the insulating region includes:
 forming a first dielectric layer over the first electrode and substrate; 
 etching a trench within the first dielectric layer directly over the first electrode such that a portion of the first electrode is exposed; 
 forming a mold layer over the first dielectric layer, such that a portion of the mold layer is within the trench; and 
 etching a portion of the mold layer such that a portion of the first electrode is exposed. 
 
     
     
       4. The method of  claim 2 , further comprising:
 wherein forming the stabilizer element includes conformally depositing the stabilizer element within the via; 
 wherein forming the resistive memory element includes depositing the resistive memory element within the via; and 
 forming a second electrode proximate the resistive memory element, the second electrode being in electrical contact with the resistive memory element. 
 
     
     
       5. The method of  claim 1 , wherein the resistance of the stabilizer element is substantially less dependent on at least one physical characteristic than the resistance of the resistive memory element. 
     
     
       6. The method of  claim 1 , wherein a correlation between resistance and at least one physical characteristic of the stabilizer element has a negative polarity to that of a correlation between resistance and the at least one physical characteristic of the resistive memory element. 
     
     
       7. The method of  claim 1 , wherein the stabilizer element includes one of a metal and polysilicon material. 
     
     
       8. The method of  claim 1 , wherein the stabilizer element includes one of a tantalum nitride, titanium nitride material, titanium aluminum nitride, and titanium silicon nitride.