Inventor

ACOSTA ALBA PABLO

FR10 patents

Patents

10 patents

US11469137B2Oct 11, 2022

Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer

COMMISSARIAT ENERGIE ATOMIQUE2 citations71

US11769687B2Sep 26, 2023

Method for layer transfer with localised reduction of a capacity to initiate a fracture

COMMISSARIAT ENERGIE ATOMIQUE0 citations60

US11508613B2Nov 22, 2022

Method of healing an implanted layer comprising a heat treatment prior to recrystallisation by laser annealing

COMMISSARIAT ENERGIE ATOMIQUE0 citations60

US11195711B2Dec 7, 2021

Healing method before transfer of a semiconducting layer

COMMISSARIAT ENERGIE ATOMIQUE1 citations59

US11848191B2Dec 19, 2023

RF substrate structure and method of production

COMMISSARIAT ENERGIE ATOMIQUE0 citations57

US11973118B2Apr 30, 2024

Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing

COMMISSARIAT ENERGIE ATOMIQUE0 citations53

US12154786B2Nov 26, 2024

Method for modifying a strain state of at least one semiconductor layer

COMMISSARIAT ENERGIE ATOMIQUE0 citations50

US11901194B2Feb 13, 2024

Method of forming a porous portion in a substrate

COMMISSARIAT ENERGIE ATOMIQUE0 citations50

US11610806B2Mar 21, 2023

Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising it

COMMISSARIAT ENERGIE ATOMIQUE0 citations50

US12040595B2Jul 16, 2024

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

COMMISSARIAT ENERGIE ATOMIQUE0 citations43