Inventor

SUN HUNG-CHANG

TW47 patents

⚠️ This page may combine multiple inventors who share the name “SUN HUNG-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUN HUNG-CHANG

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor structure with air gap and method sealing the air gap

Memory array channel regions

Three-dimensional ferroelectric random access memory devices and methods of forming

Memory array isolation structures

Semiconductor structure and method for manufacturing the same

Multiple patterning techniques for metal gate

Protective liner layers in 3D memory structure

Semiconductor structure and method of forming the same

Memory array isolation structures

Semiconductor structure

Three-dimensional memory device and method

Memory device comprising conductive pillars

Memory device and method for making same

Three-dimensional ferroelectric random access memory devices and methods of forming

Semiconductor structure and method of forming the same

Transistor, integrated circuit, and manufacturing method of transistor

Memory array source/drain electrode structures

Oxide semiconductor transistor structure in 3-d device and methods for forming the same

Semiconductor structure with air gap and method sealing the air gap

Memory device and method for making same

Memory device, semiconductor device, and manufacturing method thereof

Method of forming memory device comprising conductive pillars

Memory device

Semiconductor device with conformal source/drain layer

Semiconductor structure and method for manufacturing the same

Memory device and method for making same

Transistor, integrated circuit, and manufacturing method of transistor

Three-dimensional memory device and method

Semiconductor structure

Memory array source/drain electrode structures

Memory device comprising conductive pillars and method of forming the same

Semiconductor device and forming method thereof

Memory device and method of forming the same

Semiconductor structure with air gap and method sealing the air gap

Memory cell array, semiconductor device including the same, and manufacturing method thereof

Memory device and method for making same

Semiconductor structure with air gap and method sealing the air gap

Semiconductor structure and method for manufacturing the same

Semiconductor device

High selectivity isolation structure for improving effectiveness of 3D memory fabrication

Protective liner layers in 3D memory structure

High selectivity isolation structure for improving effectiveness of 3D memory fabrication

Oxide semiconductor transistor structure in 3-D device and methods of forming the same

Semiconductor memory structure and method for forming the same

Memory array channel regions

Semiconductor device and manufacturing method thereof

UNIV NAT TAIWAN

Memory formed by using defects