Inventor
YU JIA-NI
TW91 patents
Patents
50 patentsUS11615962B2Mar 28, 2023
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11502168B2Nov 15, 2022
Tuning threshold voltage in nanosheet transitor devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11387346B2Jul 12, 2022
Gate patterning process for multi-gate devices
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11450664B2Sep 20, 2022
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11205650B2Dec 21, 2021
Input/output semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11145734B1Oct 12, 2021
Semiconductor device with dummy fin and liner and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10937704B1Mar 2, 2021
Mixed workfunction metal for nanosheet device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10872891B2Dec 22, 2020
Integrated circuits with gate cut features
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10388771B1Aug 20, 2019
Method and device for forming cut-metal-gate feature
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11710667B2Jul 25, 2023
Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11600533B2Mar 7, 2023
Semiconductor device fabrication methods and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12170231B2Dec 17, 2024
Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12119391B2Oct 15, 2024
Fin-based semiconductor device structure including self-aligned contacts and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12107131B2Oct 1, 2024
Gate-all-around devices having self-aligned capping between channel and backside power rail
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12087772B2Sep 10, 2024
Nanosheet device architecture for cell-height scaling
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12062693B2Aug 13, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11996334B2May 28, 2024
Semiconductor device fabrication methods and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961840B2Apr 16, 2024
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11948987B2Apr 2, 2024
Self-aligned backside source contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11894367B2Feb 6, 2024
Integrated circuit including dipole incorporation for threshold voltage tuning in transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11894460B2Feb 6, 2024
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11862633B2Jan 2, 2024
Work function design to increase density of nanosheet devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848326B2Dec 19, 2023
Integrated circuits with gate cut features
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11791218B2Oct 17, 2023
Dipole patterning for CMOS devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11728401B2Aug 15, 2023
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11670692B2Jun 6, 2023
Gate-all-around devices having self-aligned capping between channel and backside power rail
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11626485B2Apr 11, 2023
Field effect transistor and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11594614B2Feb 28, 2023
P-metal gate first gate replacement process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11563109B2Jan 24, 2023
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11374105B2Jun 28, 2022
Nanosheet device with dipole dielectric layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11257815B2Feb 22, 2022
Work function design to increase density of nanosheet devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11244871B2Feb 8, 2022
Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11217585B2Jan 4, 2022
Forming dielectric dummy fins with different heights in different regions of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11031489B2Jun 8, 2021
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10930763B2Feb 23, 2021
Method and device for forming metal gate electrodes for transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10867867B2Dec 15, 2020
Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10374058B2Aug 6, 2019
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12538511B2Jan 27, 2026
Semiconductor device and method fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12513953B2Dec 30, 2025
Tuning threshold voltage in nanosheet transitor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12507474B2Dec 23, 2025
Input/output semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12453173B2Oct 21, 2025
Integrated circuits with gate cut features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12419073B2Sep 16, 2025
Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric fin
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12396248B2Aug 19, 2025
Semiconductor device fabrication methods and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12389675B2Aug 12, 2025
Semiconductor device having nanosheet transistor and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12324219B2Jun 3, 2025
Integrated circuit including dipole incorporation for threshold voltage tuning in transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237373B2Feb 25, 2025
Field effect transistor and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237418B2Feb 25, 2025
Liner for a bi-layer gate helmet and the fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237372B2Feb 25, 2025
Field effect transistor and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237396B2Feb 25, 2025
P-metal gate first gate replacement process for multigate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12206005B2Jan 21, 2025
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
Showing the top 50 of 91 patents by PatentIndex Score.