P

Inventor

COLOMBEAU BENJAMIN

US52 patents
⚠️ This page may combine multiple inventors who share the name “COLOMBEAU BENJAMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

36 patents
US9853129B2Dec 26, 2017

Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth

APPLIED MATERIALS INC18 citations92
US9865735B2Jan 9, 2018

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC4 citations83
US9460920B1Oct 4, 2016

Horizontal gate all around device isolation

APPLIED MATERIALS INC15 citations83
US11145761B2Oct 12, 2021

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC2 citations72
US10861722B2Dec 8, 2020

Integrated semiconductor processing

APPLIED MATERIALS INC6 citations72
US10573719B2Feb 25, 2020

Horizontal gate all around device isolation

APPLIED MATERIALS INC2 citations72
US10490666B2Nov 26, 2019

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC1 citations72
US10629752B1Apr 21, 2020

Gate all-around device

APPLIED MATERIALS INC2 citations71
US12027607B2Jul 2, 2024

Methods for GAA I/O formation by selective epi regrowth

APPLIED MATERIALS INC2 citations70
US11393916B2Jul 19, 2022

Methods for GAA I/O formation by selective epi regrowth

APPLIED MATERIALS INC2 citations70
US12402351B2Aug 26, 2025

Gate all around device with fully-depleted silicon-on-insulator

APPLIED MATERIALS INC0 citations62
US12261047B2Mar 25, 2025

Doping techniques

APPLIED MATERIALS INC0 citations62
US12183798B2Dec 31, 2024

Threshold voltage modulation for gate-all-around FET architecture

APPLIED MATERIALS INC0 citations62
US11923441B2Mar 5, 2024

Gate all around I/O engineering

APPLIED MATERIALS INC0 citations62
US11456178B2Sep 27, 2022

Gate interface engineering with doped layer

APPLIED MATERIALS INC0 citations62
US11450759B2Sep 20, 2022

Gate all around I/O engineering

APPLIED MATERIALS INC0 citations62
US11443948B2Sep 13, 2022

Doping techniques

APPLIED MATERIALS INC0 citations62
US11373871B2Jun 28, 2022

Methods and apparatus for integrated selective monolayer doping

APPLIED MATERIALS INC0 citations62
US11309404B2Apr 19, 2022

Integrated CMOS source drain formation with advanced control

APPLIED MATERIALS INC1 citations62
US11189479B2Nov 30, 2021

Diffusion barrier layer

APPLIED MATERIALS INC0 citations62
US12062708B2Aug 13, 2024

Selective silicon etch for gate all around transistors

APPLIED MATERIALS INC0 citations60
US11508828B2Nov 22, 2022

Selective silicon etch for gate all around transistors

APPLIED MATERIALS INC0 citations60
US11271097B2Mar 8, 2022

Cap oxidation for FinFET formation

APPLIED MATERIALS INC0 citations60
US11024746B2Jun 1, 2021

Gate all-around device

APPLIED MATERIALS INC0 citations60
US11699755B2Jul 11, 2023

Stress incorporation in semiconductor devices

APPLIED MATERIALS INC0 citations59
US12471322B2Nov 11, 2025

Horizontal GAA nano-wire and nano-slab transistors

APPLIED MATERIALS INC0 citations58
US11495500B2Nov 8, 2022

Horizontal GAA nano-wire and nano-slab transistors

APPLIED MATERIALS INC0 citations58
US12588248B2Mar 24, 2026

Template for nanosheet source drain formation with bottom dielectric

APPLIED MATERIALS INC0 citations52
US12538509B2Jan 27, 2026

Gate-all-around transistors and methods of forming

APPLIED MATERIALS INC0 citations52
US12557636B2Feb 17, 2026

Gate all around backside power rail formation with backside dielectric isolation scheme

APPLIED MATERIALS INC0 citations51
US12249511B2Mar 11, 2025

Treatments to improve device performance

APPLIED MATERIALS INC0 citations51
US10483355B2Nov 19, 2019

Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth

APPLIED MATERIALS INC0 citations51
US12334337B2Jun 17, 2025

Integrated flowable low-k gap-fill and plasma treatment

APPLIED MATERIALS INC0 citations50
US12243941B2Mar 4, 2025

Conformal oxidation for gate all around nanosheet I/O device

APPLIED MATERIALS INC0 citations50
US12327761B2Jun 10, 2025

Void-free contact trench fill in gate-all-around FET architecture

APPLIED MATERIALS INC0 citations49
US12363948B2Jul 15, 2025

Formation of gate all around device

APPLIED MATERIALS INC0 citations47

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

3 patents

VARIAN SEMICONDUCTOR EQUIPMENT

3 patents

GLOBALFOUNDRIES SG PTE LTD

2 patents

UNIV SINGAPORE

1 patent

BILOIU COSTEL

1 patent

PRADHAN NILAY ANIL

1 patent

APPLIED MATERIALS ISRAEL LTD

1 patent

HATEM CHRISTOPHER R

1 patent

TAN DEXTER XUEMING

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.