Inventor
COLOMBEAU BENJAMIN
US52 patents
⚠️ This page may combine multiple inventors who share the name “COLOMBEAU BENJAMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
36 patentsUS9853129B2Dec 26, 2017
Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth
APPLIED MATERIALS INC18 citations92
US9865735B2Jan 9, 2018
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC4 citations83
US9460920B1Oct 4, 2016
Horizontal gate all around device isolation
APPLIED MATERIALS INC15 citations83
US11145761B2Oct 12, 2021
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC2 citations72
US10861722B2Dec 8, 2020
Integrated semiconductor processing
APPLIED MATERIALS INC6 citations72
US10573719B2Feb 25, 2020
Horizontal gate all around device isolation
APPLIED MATERIALS INC2 citations72
US10490666B2Nov 26, 2019
Horizontal gate all around and FinFET device isolation
APPLIED MATERIALS INC1 citations72
US10629752B1Apr 21, 2020
Gate all-around device
APPLIED MATERIALS INC2 citations71
US12027607B2Jul 2, 2024
Methods for GAA I/O formation by selective epi regrowth
APPLIED MATERIALS INC2 citations70
US11393916B2Jul 19, 2022
Methods for GAA I/O formation by selective epi regrowth
APPLIED MATERIALS INC2 citations70
US12402351B2Aug 26, 2025
Gate all around device with fully-depleted silicon-on-insulator
APPLIED MATERIALS INC0 citations62
US12261047B2Mar 25, 2025
Doping techniques
APPLIED MATERIALS INC0 citations62
US12183798B2Dec 31, 2024
Threshold voltage modulation for gate-all-around FET architecture
APPLIED MATERIALS INC0 citations62
US11923441B2Mar 5, 2024
Gate all around I/O engineering
APPLIED MATERIALS INC0 citations62
US11456178B2Sep 27, 2022
Gate interface engineering with doped layer
APPLIED MATERIALS INC0 citations62
US11450759B2Sep 20, 2022
Gate all around I/O engineering
APPLIED MATERIALS INC0 citations62
US11443948B2Sep 13, 2022
Doping techniques
APPLIED MATERIALS INC0 citations62
US11373871B2Jun 28, 2022
Methods and apparatus for integrated selective monolayer doping
APPLIED MATERIALS INC0 citations62
US11309404B2Apr 19, 2022
Integrated CMOS source drain formation with advanced control
APPLIED MATERIALS INC1 citations62
US11189479B2Nov 30, 2021
Diffusion barrier layer
APPLIED MATERIALS INC0 citations62
US12062708B2Aug 13, 2024
Selective silicon etch for gate all around transistors
APPLIED MATERIALS INC0 citations60
US11508828B2Nov 22, 2022
Selective silicon etch for gate all around transistors
APPLIED MATERIALS INC0 citations60
US11271097B2Mar 8, 2022
Cap oxidation for FinFET formation
APPLIED MATERIALS INC0 citations60
US11024746B2Jun 1, 2021
Gate all-around device
APPLIED MATERIALS INC0 citations60
US11699755B2Jul 11, 2023
Stress incorporation in semiconductor devices
APPLIED MATERIALS INC0 citations59
US12471322B2Nov 11, 2025
Horizontal GAA nano-wire and nano-slab transistors
APPLIED MATERIALS INC0 citations58
US11495500B2Nov 8, 2022
Horizontal GAA nano-wire and nano-slab transistors
APPLIED MATERIALS INC0 citations58
US12588248B2Mar 24, 2026
Template for nanosheet source drain formation with bottom dielectric
APPLIED MATERIALS INC0 citations52
US12538509B2Jan 27, 2026
Gate-all-around transistors and methods of forming
APPLIED MATERIALS INC0 citations52
US12557636B2Feb 17, 2026
Gate all around backside power rail formation with backside dielectric isolation scheme
APPLIED MATERIALS INC0 citations51
US12249511B2Mar 11, 2025
Treatments to improve device performance
APPLIED MATERIALS INC0 citations51
US10483355B2Nov 19, 2019
Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth
APPLIED MATERIALS INC0 citations51
US12334337B2Jun 17, 2025
Integrated flowable low-k gap-fill and plasma treatment
APPLIED MATERIALS INC0 citations50
US12243941B2Mar 4, 2025
Conformal oxidation for gate all around nanosheet I/O device
APPLIED MATERIALS INC0 citations50
US12327761B2Jun 10, 2025
Void-free contact trench fill in gate-all-around FET architecture
APPLIED MATERIALS INC0 citations49
US12363948B2Jul 15, 2025
Formation of gate all around device
APPLIED MATERIALS INC0 citations47
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
3 patentsUS10381465B2Aug 13, 2019
Method for fabricating asymmetrical three dimensional device
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US9455196B2Sep 27, 2016
Method for improving fin isolation
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations58
US9748364B2Aug 29, 2017
Method for fabricating three dimensional device
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations51
VARIAN SEMICONDUCTOR EQUIPMENT
3 patentsUS8999800B2Apr 7, 2015
Method of reducing contact resistance
VARIAN SEMICONDUCTOR EQUIPMENT5 citations71
US8012843B2Sep 6, 2011
Optimized halo or pocket cold implants
VARIAN SEMICONDUCTOR EQUIPMENT2 citations59
US9337314B2May 10, 2016
Technique for selectively processing three dimensional device
VARIAN SEMICONDUCTOR EQUIPMENT0 citations50
GLOBALFOUNDRIES SG PTE LTD
2 patentsUS8354321B2Jan 15, 2013
Method for fabricating semiconductor devices with reduced junction diffusion
GLOBALFOUNDRIES SG PTE LTD4 citations62
US8860142B2Oct 14, 2014
Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction
GLOBALFOUNDRIES SG PTE LTD2 citations60
UNIV SINGAPORE
1 patentBILOIU COSTEL
1 patentPRADHAN NILAY ANIL
1 patentAPPLIED MATERIALS ISRAEL LTD
1 patentHATEM CHRISTOPHER R
1 patentTAN DEXTER XUEMING
1 patentShowing the top 50 of 52 patents by PatentIndex Score.