Inventor
YANG CHAN-LON
US130 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHAN-LON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
22 patentsUS5888414AMar 30, 1999
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
APPLIED MATERIALS INC203 citations99
US5423945AJun 13, 1995
Selectivity for etching an oxide over a nitride
APPLIED MATERIALS INC220 citations99
US6518195B1Feb 11, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC162 citations98
US6444137B1Sep 3, 2002
Method for processing substrates using gaseous silicon scavenger
APPLIED MATERIALS INC127 citations98
US6068784AMay 30, 2000
Process used in an RF coupled plasma reactor
APPLIED MATERIALS INC173 citations98
US5556501ASep 17, 1996
Silicon scavenger in an inductively coupled RF plasma reactor
APPLIED MATERIALS INC396 citations98
US5312778AMay 17, 1994
Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
APPLIED MATERIALS INC111 citations98
US5300460AApr 5, 1994
UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
APPLIED MATERIALS INC109 citations98
US5210466AMay 11, 1993
VHF/UHF reactor system
APPLIED MATERIALS INC124 citations98
US6545420B1Apr 8, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC135 citations97
US6488807B1Dec 3, 2002
Magnetic confinement in a plasma reactor having an RF bias electrode
APPLIED MATERIALS INC145 citations97
US6251792B1Jun 26, 2001
Plasma etch processes
APPLIED MATERIALS INC122 citations97
US6024826AFeb 15, 2000
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC100 citations97
US6218312B1Apr 17, 2001
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC61 citations96
US6209484B1Apr 3, 2001
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC74 citations96
US6127262AOct 3, 2000
Method and apparatus for depositing an etch stop layer
APPLIED MATERIALS INC49 citations96
US6440866B1Aug 27, 2002
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC22 citations92
US6399514B1Jun 4, 2002
High temperature silicon surface providing high selectivity in an oxide etch process
APPLIED MATERIALS INC30 citations92
US6194325B1Feb 27, 2001
Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
APPLIED MATERIALS INC41 citations92
US6171974B1Jan 9, 2001
High selectivity oxide etch process for integrated circuit structures
APPLIED MATERIALS INC23 citations92
US6036877AMar 14, 2000
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC30 citations92
US5990017ANov 23, 1999
Plasma reactor with heated source of a polymer-hardening precursor material
APPLIED MATERIALS INC32 citations92
UNITED MICROELECTRONICS CORP
15 patentsUS6251791B1Jun 26, 2001
Eliminating etching microloading effect by in situ deposition and etching
UNITED MICROELECTRONICS CORP63 citations96
US6184142B1Feb 6, 2001
Process for low k organic dielectric film etch
UNITED MICROELECTRONICS CORP81 citations96
US6426298B1Jul 30, 2002
Method of patterning a dual damascene
UNITED MICROELECTRONICS CORP52 citations93
US6368974B1Apr 9, 2002
Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching
UNITED MICROELECTRONICS CORP43 citations93
US6083845AJul 4, 2000
Etching method
UNITED MICROELECTRONICS CORP20 citations93
US6635565B2Oct 21, 2003
Method of cleaning a dual damascene structure
UNITED MICROELECTRONICS CORP32 citations92
US6303482B1Oct 16, 2001
Method for cleaning the surface of a semiconductor wafer
UNITED MICROELECTRONICS CORP34 citations92
US6221772B1Apr 24, 2001
Method of cleaning the polymer from within holes on a semiconductor wafer
UNITED MICROELECTRONICS CORP34 citations92
US6010968AJan 4, 2000
Method for forming a contact opening with multilevel etching
UNITED MICROELECTRONICS CORP21 citations92
US6352938B2Mar 5, 2002
Method of removing photoresist and reducing native oxide in dual damascene copper process
UNITED MICROELECTRONICS CORP25 citations90
US6528428B1Mar 4, 2003
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP13 citations84
US6218084B1Apr 17, 2001
Method for removing photoresist layer
UNITED MICROELECTRONICS CORP17 citations84
US8952451B2Feb 10, 2015
Semiconductor device having metal gate and manufacturing method thereof
UNITED MICROELECTRONICS CORP5 citations83
US6554002B2Apr 29, 2003
Method for removing etching residues
UNITED MICROELECTRONICS CORP9 citations74
US6147007ANov 14, 2000
Method for forming a contact hole on a semiconductor wafer
UNITED MICROELECTRONICS CORP11 citations74
CYPRESS SEMICONDUCTOR CORP
5 patentsUS6461904B1Oct 8, 2002
Structure and method for making a notched transistor with spacers
CYPRESS SEMICONDUCTOR CORP19 citations93
US6890859B1May 10, 2005
Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby
CYPRESS SEMICONDUCTOR CORP38 citations89
US7078334B1Jul 18, 2006
In situ hard mask approach for self-aligned contact etch
CYPRESS SEMICONDUCTOR CORP20 citations88
US7253094B1Aug 7, 2007
Methods for cleaning contact openings to reduce contact resistance
CYPRESS SEMICONDUCTOR CORP12 citations83
US6699795B1Mar 2, 2004
Gate etch process
CYPRESS SEMICONDUCTOR CORP14 citations83
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS9564489B2Feb 7, 2017
Multiple gate field-effect transistors having oxygen-scavenged gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD297 citations99
US11335606B2May 17, 2022
Power rails for stacked semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US10164096B2Dec 25, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10026843B2Jul 17, 2018
Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
LIAO PO-JUI
2 patentsGUO TED MING-LANG
1 patentYANG CHAN-LON
1 patentShowing the top 50 of 130 patents by PatentIndex Score.