P

Inventor

YANG CHAN-LON

US130 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHAN-LON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

22 patents
US5888414AMar 30, 1999

Plasma reactor and processes using RF inductive coupling and scavenger temperature control

APPLIED MATERIALS INC203 citations99
US5423945AJun 13, 1995

Selectivity for etching an oxide over a nitride

APPLIED MATERIALS INC220 citations99
US6518195B1Feb 11, 2003

Plasma reactor using inductive RF coupling, and processes

APPLIED MATERIALS INC162 citations98
US6444137B1Sep 3, 2002

Method for processing substrates using gaseous silicon scavenger

APPLIED MATERIALS INC127 citations98
US6068784AMay 30, 2000

Process used in an RF coupled plasma reactor

APPLIED MATERIALS INC173 citations98
US5556501ASep 17, 1996

Silicon scavenger in an inductively coupled RF plasma reactor

APPLIED MATERIALS INC396 citations98
US5312778AMay 17, 1994

Method for plasma processing using magnetically enhanced plasma chemical vapor deposition

APPLIED MATERIALS INC111 citations98
US5300460AApr 5, 1994

UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers

APPLIED MATERIALS INC109 citations98
US5210466AMay 11, 1993

VHF/UHF reactor system

APPLIED MATERIALS INC124 citations98
US6545420B1Apr 8, 2003

Plasma reactor using inductive RF coupling, and processes

APPLIED MATERIALS INC135 citations97
US6488807B1Dec 3, 2002

Magnetic confinement in a plasma reactor having an RF bias electrode

APPLIED MATERIALS INC145 citations97
US6251792B1Jun 26, 2001

Plasma etch processes

APPLIED MATERIALS INC122 citations97
US6024826AFeb 15, 2000

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC100 citations97
US6218312B1Apr 17, 2001

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC61 citations96
US6209484B1Apr 3, 2001

Method and apparatus for depositing an etch stop layer

APPLIED MATERIALS INC74 citations96
US6127262AOct 3, 2000

Method and apparatus for depositing an etch stop layer

APPLIED MATERIALS INC49 citations96
US6440866B1Aug 27, 2002

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC22 citations92
US6399514B1Jun 4, 2002

High temperature silicon surface providing high selectivity in an oxide etch process

APPLIED MATERIALS INC30 citations92
US6194325B1Feb 27, 2001

Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography

APPLIED MATERIALS INC41 citations92
US6171974B1Jan 9, 2001

High selectivity oxide etch process for integrated circuit structures

APPLIED MATERIALS INC23 citations92
US6036877AMar 14, 2000

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC30 citations92
US5990017ANov 23, 1999

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC32 citations92

UNITED MICROELECTRONICS CORP

15 patents
US6251791B1Jun 26, 2001

Eliminating etching microloading effect by in situ deposition and etching

UNITED MICROELECTRONICS CORP63 citations96
US6184142B1Feb 6, 2001

Process for low k organic dielectric film etch

UNITED MICROELECTRONICS CORP81 citations96
US6426298B1Jul 30, 2002

Method of patterning a dual damascene

UNITED MICROELECTRONICS CORP52 citations93
US6368974B1Apr 9, 2002

Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching

UNITED MICROELECTRONICS CORP43 citations93
US6083845AJul 4, 2000

Etching method

UNITED MICROELECTRONICS CORP20 citations93
US6635565B2Oct 21, 2003

Method of cleaning a dual damascene structure

UNITED MICROELECTRONICS CORP32 citations92
US6303482B1Oct 16, 2001

Method for cleaning the surface of a semiconductor wafer

UNITED MICROELECTRONICS CORP34 citations92
US6221772B1Apr 24, 2001

Method of cleaning the polymer from within holes on a semiconductor wafer

UNITED MICROELECTRONICS CORP34 citations92
US6010968AJan 4, 2000

Method for forming a contact opening with multilevel etching

UNITED MICROELECTRONICS CORP21 citations92
US6352938B2Mar 5, 2002

Method of removing photoresist and reducing native oxide in dual damascene copper process

UNITED MICROELECTRONICS CORP25 citations90
US6528428B1Mar 4, 2003

Method of forming dual damascene structure

UNITED MICROELECTRONICS CORP13 citations84
US6218084B1Apr 17, 2001

Method for removing photoresist layer

UNITED MICROELECTRONICS CORP17 citations84
US8952451B2Feb 10, 2015

Semiconductor device having metal gate and manufacturing method thereof

UNITED MICROELECTRONICS CORP5 citations83
US6554002B2Apr 29, 2003

Method for removing etching residues

UNITED MICROELECTRONICS CORP9 citations74
US6147007ANov 14, 2000

Method for forming a contact hole on a semiconductor wafer

UNITED MICROELECTRONICS CORP11 citations74

CYPRESS SEMICONDUCTOR CORP

5 patents

TAIWAN SEMICONDUCTOR MFG CO LTD

4 patents

LIAO PO-JUI

2 patents

GUO TED MING-LANG

1 patent

YANG CHAN-LON

1 patent

Showing the top 50 of 130 patents by PatentIndex Score.