P

Inventor

SHINOZAKI SATOSHI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “SHINOZAKI SATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO SHIBAURA ELECTRIC CO

14 patents
US4615104AOct 7, 1986

Method of forming isolation regions containing conductive patterns therein

TOKYO SHIBAURA ELECTRIC CO27 citations92
US4507849AApr 2, 1985

Method of making isolation grooves by over-filling with polycrystalline silicon having a difference in impurity concentration inside the grooves followed by etching off the overfill based upon this difference

TOKYO SHIBAURA ELECTRIC CO30 citations92
US4532701AAug 6, 1985

Method of manufacturing semiconductor device

TOKYO SHIBAURA ELECTRIC CO11 citations74
US4476157AOct 9, 1984

Method for manufacturing schottky barrier diode

TOKYO SHIBAURA ELECTRIC CO11 citations74
US4106049AAug 8, 1978

Semiconductor device

TOKYO SHIBAURA ELECTRIC CO11 citations74
US4058419ANov 15, 1977

Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques

TOKYO SHIBAURA ELECTRIC CO8 citations73
US4615103AOct 7, 1986

Method of forming isolation regions containing conductive patterns therein

TOKYO SHIBAURA ELECTRIC CO4 citations63
US4459606AJul 10, 1984

Integrated injection logic semiconductor devices

TOKYO SHIBAURA ELECTRIC CO3 citations62
US4153487AMay 8, 1979

Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques

TOKYO SHIBAURA ELECTRIC CO3 citations62
US4151019AApr 24, 1979

Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques

TOKYO SHIBAURA ELECTRIC CO6 citations62
US4064526ADec 20, 1977

I.I.L. with graded base inversely operated transistor

TOKYO SHIBAURA ELECTRIC CO6 citations62
US4054900AOct 18, 1977

I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor

TOKYO SHIBAURA ELECTRIC CO2 citations62
US4453233AJun 5, 1984

Semiconductor memory device and method of manufacturing the same

TOKYO SHIBAURA ELECTRIC CO0 citations42
US4119998AOct 10, 1978

Integrated injection logic with both grid and internal double-diffused injectors

TOKYO SHIBAURA ELECTRIC CO0 citations41

MAEKAWA SEISAKUSHO KK

6 patents

TOSHIBA KK

4 patents

VLSI TECHNOLOGY RES ASS

3 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

2 patents

SHINOZAKI SATOSHI

2 patents

ISAWA TSUYOSHI

1 patent

CORPORATE JURIDICIAL PERSON JA

1 patent

FUJITSU LTD

1 patent

SHIBAURA INST TECHNOLOGY

1 patent