Inventor
SHINOZAKI SATOSHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “SHINOZAKI SATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO SHIBAURA ELECTRIC CO
14 patentsUS4615104AOct 7, 1986
Method of forming isolation regions containing conductive patterns therein
TOKYO SHIBAURA ELECTRIC CO27 citations92
US4507849AApr 2, 1985
Method of making isolation grooves by over-filling with polycrystalline silicon having a difference in impurity concentration inside the grooves followed by etching off the overfill based upon this difference
TOKYO SHIBAURA ELECTRIC CO30 citations92
US4532701AAug 6, 1985
Method of manufacturing semiconductor device
TOKYO SHIBAURA ELECTRIC CO11 citations74
US4476157AOct 9, 1984
Method for manufacturing schottky barrier diode
TOKYO SHIBAURA ELECTRIC CO11 citations74
US4106049AAug 8, 1978
Semiconductor device
TOKYO SHIBAURA ELECTRIC CO11 citations74
US4058419ANov 15, 1977
Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO8 citations73
US4615103AOct 7, 1986
Method of forming isolation regions containing conductive patterns therein
TOKYO SHIBAURA ELECTRIC CO4 citations63
US4459606AJul 10, 1984
Integrated injection logic semiconductor devices
TOKYO SHIBAURA ELECTRIC CO3 citations62
US4153487AMay 8, 1979
Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO3 citations62
US4151019AApr 24, 1979
Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
TOKYO SHIBAURA ELECTRIC CO6 citations62
US4064526ADec 20, 1977
I.I.L. with graded base inversely operated transistor
TOKYO SHIBAURA ELECTRIC CO6 citations62
US4054900AOct 18, 1977
I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor
TOKYO SHIBAURA ELECTRIC CO2 citations62
US4453233AJun 5, 1984
Semiconductor memory device and method of manufacturing the same
TOKYO SHIBAURA ELECTRIC CO0 citations42
US4119998AOct 10, 1978
Integrated injection logic with both grid and internal double-diffused injectors
TOKYO SHIBAURA ELECTRIC CO0 citations41
MAEKAWA SEISAKUSHO KK
6 patentsUS5880343AMar 9, 1999
Grass and method of introducing endophytic fungi into a grass
MAEKAWA SEISAKUSHO KK27 citations92
US6180855B1Jan 30, 2001
Method of introducing endophytic fungi into a grass
MAEKAWA SEISAKUSHO KK13 citations73
US5914107AJun 22, 1999
Method of introducing an endophytic fungus into rough bluegrass belonging to Poa trivialis and Poa compressa
MAEKAWA SEISAKUSHO KK6 citations73
US7771766B2Aug 10, 2010
Apparatus and method for freeze-storing baked food
MAEKAWA SEISAKUSHO KK2 citations59
US6805859B2Oct 19, 2004
Symbiotic fungus
MAEKAWA SEISAKUSHO KK2 citations57
US8017111B2Sep 13, 2011
Method of introducing symbiotic fungus into plant
MAEKAWA SEISAKUSHO KK0 citations47
TOSHIBA KK
4 patentsUS5110766AMay 5, 1992
Method of manufacturing a semiconductor device including forming a flattening layer over hollows in a contact hole
TOSHIBA KK23 citations92
US4950617AAug 21, 1990
Method of manufacturing semiconductor device
TOSHIBA KK31 citations92
US5071784ADec 10, 1991
Method of making a semiconductor memory device
TOSHIBA KK8 citations73
US4994889AFeb 19, 1991
Semiconductor memory device
TOSHIBA KK12 citations73
VLSI TECHNOLOGY RES ASS
3 patentsUS4377902AMar 29, 1983
Method of manufacturing semiconductor device using laser beam crystallized poly/amorphous layer
VLSI TECHNOLOGY RES ASS22 citations82
US4371423AFeb 1, 1983
Method of manufacturing semiconductor device utilizing a lift-off technique
VLSI TECHNOLOGY RES ASS27 citations76
US4313255AFeb 2, 1982
Method for manufacturing integrated circuit device
VLSI TECHNOLOGY RES ASS15 citations67