Inventor

YAMAGUCHI YASUO

JP179 patents

⚠️ This page may combine multiple inventors who share the name “YAMAGUCHI YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YAMAGUCHI YASUO

MITSUBISHI ELECTRIC CORP

Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof

Semiconductor device having metal silicide film

Device having a high concentration region under the channel

Semiconductor device with improved substrate bias voltage generating circuit

Inductor with patterned ground shield

Semiconductor device and a method of manufacturing thereof

Inductor with patterned ground shield

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor substrate having total and partial dielectric isolation

Silicone oil-filled semiconductor pressure sensor

Semiconductor device having an SOI structure and a manufacturing method thereof

Thin-film soi-mosfet with a body region

MOS type field effect transistor formed on a semiconductor layer on an insulator substrate

Semiconductor device and a method of manufacturing thereof

Semiconductor device, method of manufacturing same and method of designing same

Acceleration sensor and method of manufacturing acceleration sensor

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device having metal silicide film and manufacturing method thereof

Semiconductor device formed on insulating layer and method of manufacturing the same

Semiconductor device having metal silicide film and manufacturing method thereof

MOS Transistor with a buried oxide film containing fluorine

Semiconductor device

Input/output protection circuit having an SOI structure

Semiconductor device having metal silicide film

Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor

Semiconductor device

Electrostatic capacity-type acceleration sensor

Thin-film SOI MOSFET

Semiconductor device

AISIN AW CO

Drive apparatus for hybrid vehicle and control method and control device thereof

Motor cooling circuit

Motor

Electric motor with plural rotor portions having pole members of different widths

Driving apparatus for hybrid vehicle

Hybrid vehicle drive unit

Motor-driven vehicle drive control apparatus and method thereof

Electric drive control apparatus, method and program therefor

Motor that utilizes the magnetic torque

Permanent magnet type synchronous motor

Permanent magnet type synchronous motor

Rotor for a revolving-field type motor

Hybrid vehicle drive device

Hybrid vehicle driving apparatus electrical motor having magnetic flux leakage shielded position sensor

RENESAS TECH CORP

Semiconductor device and method of manufacturing the same

Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layers

(unassigned)

Semiconductor device on an SOI substrate

KOBAYASHI YASUHIKO

Vehicle control device