Inventor

LOWREY TYLER A

US197 patents

⚠️ This page may combine multiple inventors who share the name “LOWREY TYLER A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LOWREY TYLER A

MICRON TECHNOLOGY INC

Folded bit line ferroelectric memory device

Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology

Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process

Method of making a 3-dimensional programmable antifuse for integrated circuits

Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells

Spacers for field emission display fabricated via self-aligned high energy ablation

Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology

Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage

Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology

Method to form self-aligned gate structures and focus rings

Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM

Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography

Memory cell arrays

Static discharge circuit having low breakdown voltage bipolar clamp

Field emission structures produced on macro-grain polysilicon substrates

Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)

Method of making vertical diode structures

Method of forming low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer

Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer

Vertical diode structures with low series resistance

Method for fabricating a flash EEPROM

OVONYX INC

Programming a phase-change material memory

Reduced area intersection between electrode and programming element

Programming a phase-change material memory

Single level metal memory cell using chalcogenide cladding

Technique and apparatus for performing write operations to a phase change material memory device

Utilizing atomic layer deposition for programmable device

Modified contact for programmable devices

Programming a phase-change memory with slow quench time

Pore structure for programmable device

Elevated pore phase-change memory

Compositionally modified resistive electrode

Phase change access device for memories

Modified contact for programmable devices

INTEL CORP

Memory having access devices using phase change material such as chalcogenide

Multiple layer phrase-change memory

Method for reading a structural phase-change memory

Phase change material memory device

Compositionally modified resistive electrode

Multiple layer phase-change memory

Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array

Three dimensional programmable device and method for fabricating the same

Multiple layer phase-change memory

Refreshing memory cells of a phase change material memory device

Compositionally modified resistive electrode

Phase change material memory device

KEYSTONE TECHNOLOGY SOLUTIONS

System and method for identifying a radio frequency identification (RFID) device

MICRON SEMICONDUCTOR INC

Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers

MICRON DISPLAY TECH INC

Controlling pixel brightness in a field emission display using circuits for sampling and discharging

(unassigned)

Method of making a low-resistance contact to silicon having a titanium silicide interface, an amorphous titanium nitride barrier layer and a conductive plug