Phase change material memory device

Abstract

A phase change material memory cell may be formed with singulated, cup-shaped phase change material. The interior of the cup-shaped phase change material may be filled with a thermal insulating material. As a result, heat losses upwardly through the phase change material may be reduced and adhesion problems between the phase change material and the rest of the device may likewise be reduced in some embodiments. In addition, a barrier layer may be provided between the upper electrode and the remainder of the device that may reduce species incorporation from the top electrode into the phase change material, in some embodiments. Chemical mechanical planarization may be utilized to define the phase change material reducing the effects of phase change material dry etching in some embodiments.

1. A method comprising:
 defining a singulated opening in an insulating layer,  
 forming a cup-shaped chalcogenide material entirely in said opening; and  
 forming a thermally insulating material in said cup-shaped chalcogenide material.  
 
   
   
     2. The method of  claim 1  including forming an electrode and a barrier layer, said electrode coupled to said chalcogenide material through said barrier layer. 
   
   
     3. The method of  claim 1  including forming an electrode electrically coupled to said chalcogenide material, and isolating species in said electrode from said chalcogenide material using a barrier layer. 
   
   
     4. The method of  claim 1  including insulating said chalcogenide material to reduce upwardly directed heat loss. 
   
   
     5. The method of  claim 1  including defining said chalcogenide material using a planarization process. 
   
   
     6. The method of  claim 5  including defining said chalcogenide material using a chemical mechanical planarization technique. 
   
   
     7. The method of  claim 1  including defining a side wall spacer in said singulated opening. 
   
   
     8. The method of  claim 7  including defining an electrode in said opening. 
   
   
     9. The method of  claim 8  including using said side wall spacer to define the cup-shape of said chalcogenide material. 
   
   
     10. A method comprising:
 defining a phase change material;  
 forming an electrode over said phase change material; and  
 depositing a titanium barrier layer in contact with said phase change material and electrode such that without said titanium barrier layer said electrode contact said phase change material.  
 
   
   
     11. The method of  claim 10  including forming said barrier layer of a thickness of 500 Angstroms or less. 
   
   
     12. The method of  claim 11  including forming said barrier layer of titanium nitride. 
   
   
     13. A method comprising:
 defining an opening in a structure;  
 forming a layer of chalcogenide material into said opening and over said structure; and  
 planarizing said chalcogenide material.  
 
   
   
     14. The method of  claim 13  including chemical mechanical planarizing said chalcogenide material. 
   
   
     15. The method of  claim 13  including forming a side wall spacer in said opening and then depositing said chalcogenide material. 
   
   
     16. The method of  claim 13  including forming a cup-shaped chalcogenide material. 
   
   
     17. The method of  claim 16  including filling said cup-shaped chalcogenide material with an insulator.