Inventor

LUETZEN JOERN

DE17 patents

Patents

17 patents

US7041568B2May 9, 2006

Method for the production of a self-adjusted structure on a semiconductor wafer

INFINEON TECHNOLOGIES AG212 citations99

US6853023B2Feb 8, 2005

Semiconductor memory cell configuration and a method for producing the configuration

INFINEON TECHNOLOGIES AG42 citations92

US6633061B2Oct 14, 2003

SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production method

INFINEON TECHNOLOGIES AG21 citations92

US6455369B1Sep 24, 2002

Method for fabricating a trench capacitor

INFINEON TECHNOLOGIES AG50 citations91

US7087484B2Aug 8, 2006

Method for fabricating trench capacitors for integrated semiconductor memories

INFINEON TECHNOLOGIES AG13 citations84

US6919255B2Jul 19, 2005

Semiconductor trench structure

INFINEON TECHNOLOGIES AG16 citations84

US6863769B2Mar 8, 2005

Configuration and method for making contact with the back surface of a semiconductor substrate

INFINEON TECHNOLOGIES AG7 citations74

US6861312B2Mar 1, 2005

Method for fabricating a trench structure

INFINEON TECHNOLOGIES AG11 citations74

US6674113B2Jan 6, 2004

Trench capacitor and method for manufacturing the same

INFINEON TECHNOLOGIES AG9 citations74

US6541334B2Apr 1, 2003

Integrated circuit configuration having at least one buried circuit element and an insulating layer, and a method of manufacturing the integrated circuit configuration

INFINEON TECHNOLOGIES AG8 citations74

US6756626B2Jun 29, 2004

Trench capacitor having an insulation collar

INFINEON TECHNOLOGIES AG7 citations73

US6916721B2Jul 12, 2005

Method for fabricating a trench capacitor with an insulation collar

INFINEON TECHNOLOGIES AG11 citations72

US6939805B2Sep 6, 2005

Method of etching a layer in a trench and method of fabricating a trench capacitor

INFINEON TECHNOLOGIES AG7 citations71

US7084043B2Aug 1, 2006

Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor

INFINEON TECHNOLOGIES AG7 citations70

US6746880B2Jun 8, 2004

Method for making electrical contact with a rear side of a semiconductor substrate during its processing

INFINEON TECHNOLOGIES AG2 citations63

US7208370B2Apr 24, 2007

Method for fabricating a vertical transistor in a trench, and vertical transistor

INFINEON TECHNOLOGIES AG2 citations62

US6977405B2Dec 20, 2005

Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it

INFINEON TECHNOLOGIES AG2 citations61