Inventor
YAMASHITA TOMOHIRO
JP105 patents
⚠️ This page may combine multiple inventors who share the name “YAMASHITA TOMOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
13 patentsUS7270701B2Sep 18, 2007
Ink jet ink, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK64 citations97
US7160372B2Jan 9, 2007
Ink jet ink, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK65 citations97
US7611571B2Nov 3, 2009
Ink, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK38 citations92
US7550037B2Jun 23, 2009
Ink, ink jet recording method, ink cartridge, recording unit and ink jet recording apparatus
CANON KK27 citations92
US7297197B2Nov 20, 2007
Ink jet ink, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK44 citations92
US7247194B2Jul 24, 2007
Ink jet ink, ink set, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK50 citations92
US7226498B2Jun 5, 2007
Ink jet yellow ink, ink jet light-color ink, ink set, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK35 citations92
US7201791B2Apr 10, 2007
Ink jet light-color ink, ink set, ink jet recording method, ink cartridge, recording unit, and ink jet recording apparatus
CANON KK38 citations92
US9562165B2Feb 7, 2017
Ink set and ink jet recording method
CANON KK4 citations72
US11833838B2Dec 5, 2023
Ink jet recording method and ink jet recording apparatus
CANON KK2 citations71
US11827033B2Nov 28, 2023
Ink jet recording method and ink jet recording apparatus
CANON KK2 citations71
US11654693B2May 23, 2023
Ink jet recording method and ink jet recording apparatus
CANON KK2 citations71
US9994012B2Jun 12, 2018
Ink jet recording method and ink jet recording apparatus
CANON KK2 citations68
MITSUBISHI ELECTRIC CORP
12 patentsUS5554871ASep 10, 1996
Semiconductor device having MOS transistor with nitrogen doping
MITSUBISHI ELECTRIC CORP54 citations96
US6469347B1Oct 22, 2002
Buried-channel semiconductor device, and manufacturing method thereof
MITSUBISHI ELECTRIC CORP40 citations93
US6287906B1Sep 11, 2001
Semiconductor device having MOS transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP15 citations93
US6130463AOct 10, 2000
Field effect transistor and method of manufacturing same
MITSUBISHI ELECTRIC CORP16 citations93
US5945710AAug 31, 1999
Semiconductor device with doped contact impurity regions having particular doping levels
MITSUBISHI ELECTRIC CORP29 citations93
US6388295B1May 14, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP21 citations92
US6600180B1Jul 29, 2003
Semiconductor device, method of manufacturing the same and exposure mask for implantation
MITSUBISHI ELECTRIC CORP18 citations80
US6667221B2Dec 23, 2003
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP11 citations74
US6420763B1Jul 16, 2002
Semiconductor device having a retrograde well structure and method of manufacturing thereof
MITSUBISHI ELECTRIC CORP9 citations74
US6335556B1Jan 1, 2002
Semiconductor device and method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP13 citations74
US6162668ADec 19, 2000
Method of manufacturing a semiconductor device having a lightly doped contact impurity region surrounding a highly doped contact impurity region
MITSUBISHI ELECTRIC CORP10 citations74
US5731233AMar 24, 1998
Semiconductor device having MOS transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP10 citations74
RENESAS TECH CORP
5 patentsUS6835988B2Dec 28, 2004
Semiconductor device having channel cut layers provided at different depths
RENESAS TECH CORP21 citations93
US6777758B2Aug 17, 2004
Semiconductor device
RENESAS TECH CORP31 citations93
US6921947B2Jul 26, 2005
Semiconductor device having recessed isolation insulation film
RENESAS TECH CORP21 citations92
US6744113B2Jun 1, 2004
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film
RENESAS TECH CORP13 citations84
US6864545B2Mar 8, 2005
Semiconductor device including low-resistance wires electrically connected to impurity layers
RENESAS TECH CORP7 citations74
RENESAS ELECTRONICS CORP
4 patentsUS10043814B2Aug 7, 2018
Semiconductor substrate with a single protruding portion with multiple different widths and insulation thickness
RENESAS ELECTRONICS CORP13 citations84
US10644017B2May 5, 2020
Semiconductor device and manufacturing method therefor
RENESAS ELECTRONICS CORP2 citations73
US10411139B2Sep 10, 2019
Semiconductor device and method of manufacturing the semiconductor device
RENESAS ELECTRONICS CORP5 citations73
US10249638B2Apr 2, 2019
Semiconductor device
RENESAS ELECTRONICS CORP2 citations73
MORI YASUHITO
2 patentsNIPPON STEEL CORP
2 patentsTOSHIBA KK
2 patentsUS11774184B2Oct 3, 2023
Two-stage heat regenerating cryogenic refrigerator
TOSHIBA KK1 citations73
US11208584B2Dec 28, 2021
Heat regenerating material, regenerator, refrigerator, superconducting magnet, nuclear magnetic resonance imaging apparatus, nuclear magnetic resonance apparatus, cryopump, and magnetic field application type single crystal pulling apparatus
TOSHIBA KK4 citations73
NITTO DENKO CORP
2 patentsSUNTORY LTD
1 patentTOYOTA MOTOR CO LTD
1 patentAISIN AW IND CO LTD
1 patentTAIHO PHARMACEUTICAL CO LTD
1 patentTAIHO PHARMACEUTICALS CO LTD
1 patentYOSHIZAWA JUN
1 patentTDK CORP
1 patentAISIN AW CO
1 patentShowing the top 50 of 105 patents by PatentIndex Score.