Inventor · disambiguated record
Edward W. Kiewra
Also filed as: KIEWRA EDWARD · KIEWRA EDWARD W · KIEWRA EDWARD WILLIAM
56 granted patents·4 pending applications·688 citations·filing 1995–2024
98Inventor score
Top patents by PatentIndex Score
60 records- 0198US11378743B1Optical components in the back-end-of-line stack of a photonics chip using plural cores vertically stackedGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 5, 2022·12 cites·20 claims
- 0298US8525169B1Reliable physical unclonable function for device authenticationEDELSTEIN DANIEL C·Filed 2012·Granted Sep 3, 2013·115 cites·23 claims
- 0397US6383920B1Process of enclosing via for improved reliability in dual damascene interconnectsIBM·Filed 2001·Granted May 7, 2002·179 cites·27 claims
- 0495US11520113B1Photodetectors and terminators including a tapered thicknessGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 6, 2022·4 cites·20 claims
- 0595US9466753B1Photodetector methods and photodetector structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·8 cites·14 claims
- 0693US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 0788US12405423B2Hybrid edge couplers with voidsGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 2, 2025·1 cites·20 claims
- 0888US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 0988US7964896B2Buried channel MOSFET using III-V compound semiconductors and high k gate dielectricsIBM·Filed 2008·Granted Jun 21, 2011·13 cites·29 claims
- 1087US6420749B1Trench field shield in trench isolationIBM·Filed 2000·Granted Jul 16, 2002·48 cites·13 claims
- 1184US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 1284US6444565B1Dual-rie structure for via/line interconnectionsIBM·Filed 2001·Granted Sep 3, 2002·34 cites·20 claims
- 1382US7560375B2Gas dielectric structure forming methodsIBM·Filed 2004·Granted Jul 14, 2009·34 cites·12 claims
- 1481US10103280B1Rapid melt growth photodetectorIBM·Filed 2017·Granted Oct 16, 2018·3 cites·25 claims
- 1581US7102204B2Integrated SOI fingered decoupling capacitorIBM·Filed 2004·Granted Sep 5, 2006·24 cites·18 claims
- 1679US9678273B2Device for propagating light and method for fabricating a deviceIBM·Filed 2015·Granted Jun 13, 2017·3 cites·13 claims
- 1779US9658400B2Method for fabricating a device for propagating lightIBM·Filed 2015·Granted May 23, 2017·3 cites·13 claims
- 1879US7674675B2Method of forming an integrated SOI fingered decoupling capacitorIBM·Filed 2006·Granted Mar 9, 2010·7 cites·13 claims
- 1976US9136303B2CMOS protection during germanium photodetector processingIBM·Filed 2013·Granted Sep 15, 2015·1 cites·13 claims
- 2075US2024210621A1Photonic integrated circuit structure with at least one tapered sidewall liner adjacent to a waveguide coreGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 2174US6486526B1Crack stop between neighboring fuses for protection from fuse blow damageIBM·Filed 1999·Granted Nov 26, 2002·42 cites·7 claims
- 2273US9304335B2Integrated LDMOS devices for silicon photonicsIBM·Filed 2014·Granted Apr 5, 2016·2 cites·16 claims
- 2373US9036959B2Intergrating a silicon photonics photodetector with CMOS devicesIBM·Filed 2013·Granted May 19, 2015·3 cites·22 claims
- 2472US7287325B2Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishingIBM·Filed 2005·Granted Oct 30, 2007·3 cites·7 claims
- 2570US9343545B2Electrical coupling of memory cell access devices to a word lineIBM·Filed 2013·Granted May 17, 2016·3 cites·8 claims
- 2670US8895352B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2009·Granted Nov 25, 2014·3 cites·20 claims
- 2770US8816333B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2012·Granted Aug 26, 2014·2 cites·16 claims
- 2869US11994714B2Photonic integrated circuit structure with at least one tapered sidewall liner adjacent to a waveguide coreGLOBALFOUNDRIES US INC·Filed 2021·Granted May 28, 2024·0 cites·8 claims
- 2969US9704958B1III-V field effect transistor on a dielectric layerIBM·Filed 2015·Granted Jul 11, 2017·1 cites·15 claims
- 3068US7119545B2Capacitive monitors for detecting metal extrusion during electromigrationIBM·Filed 2004·Granted Oct 10, 2006·11 cites·11 claims
- 3168US6566238B2Metal wire fuse structure with cavityINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 20, 2003·12 cites·14 claims
- 3267US9287115B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2014·Granted Mar 15, 2016·1 cites·20 claims
- 3365US9590001B2CMOS protection during germanium photodetector processingIBM·Filed 2015·Granted Mar 7, 2017·1 cites·19 claims
- 3464US8809860B2III-V compound semiconductor material passivation with crystalline interlayerIBM·Filed 2013·Granted Aug 19, 2014·1 cites·9 claims
- 3564US8431476B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 30, 2013·1 cites·20 claims
- 3664US7129557B2Autonomic thermal monitor and controller for thin film devicesIBM·Filed 2004·Granted Oct 31, 2006·11 cites·13 claims
- 3763US9299804B2Electrical coupling of memory cell access devices to a word lineIBM·Filed 2013·Granted Mar 29, 2016·1 cites·14 claims
- 3861US6433436B1Dual-RIE structure for via/line interconnectionsIBM·Filed 1999·Granted Aug 13, 2002·22 cites·10 claims
- 3960US11774686B2Edge couplers including a rounded region adjacent to an opening in the interconnect structureGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 4060US11143953B2Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3IBM·Filed 2019·Granted Oct 12, 2021·0 cites·19 claims
- 4159US8525290B2Method of forming memory cell access deviceLAI ERH-KUN·Filed 2011·Granted Sep 3, 2013·1 cites·25 claims
- 4257US9954137B2Photodetector and methods of manufactureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 24, 2018·0 cites·20 claims
- 4357US8524614B2III-V compound semiconductor material passivation with crystalline interlayerSHIU KUEN-TING·Filed 2010·Granted Sep 3, 2013·1 cites·17 claims
- 4457US7078259B2Method for integrating thermistorIBM·Filed 2004·Granted Jul 18, 2006·7 cites·18 claims
- 4556US11611002B2Photodiode and/or pin diode structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 21, 2023·0 cites·19 claims
- 4654US8273649B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2008·Granted Sep 25, 2012·0 cites·15 claims
- 4753US10014377B2III-V field effect transistor on a dielectric layerIBM·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 4853US9882021B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2016·Granted Jan 30, 2018·0 cites·13 claims
- 4952US9882081B2Photodetector methods and photodetector structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·0 cites·19 claims
- 5051US5670018AIsotropic silicon etch process that is highly selective to tungstenSIEMENS AG·Filed 1995·Granted Sep 23, 1997·21 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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