Inventor

JEONG BYUNGHOON

KR33 patents

Patents

33 patents

US10262708B2Apr 16, 2019

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72

US11127462B2Sep 21, 2021

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD4 citations72

US11107512B2Aug 31, 2021

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD3 citations72

US10998888B2May 4, 2021

Parameter monitoring circuit for detecting error of parameter, duty cycle correction circuit, and impedance calibration circuit

SAMSUNG ELECTRONICS CO LTD2 citations72

US11367471B2Jun 21, 2022

Impedance calibration circuit and method of calibrating impedance in memory device

SAMSUNG ELECTRONICS CO LTD3 citations71

US12591394B2Mar 31, 2026

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12210773B2Jan 28, 2025

Storage device for transmitting data having an embedded command in both directions of a shared channel, and a method of operating the storage device

SAMSUNG ELECTRONICS CO LTD0 citations62

US12190995B2Jan 7, 2025

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12112071B2Oct 8, 2024

Nonvolatile memory device supporting high-efficiency I/O interface

SAMSUNG ELECTRONICS CO LTD0 citations62

US12008268B2Jun 11, 2024

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11769537B2Sep 26, 2023

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11756592B2Sep 12, 2023

Memory device supporting DBI interface and operating method of memory device

SAMSUNG ELECTRONICS CO LTD0 citations62

US11562780B2Jan 24, 2023

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11315614B2Apr 26, 2022

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US12047082B2Jul 23, 2024

Semiconductor device including delay compensation circuit

SAMSUNG ELECTRONICS CO LTD0 citations61

US11522550B2Dec 6, 2022

Semiconductor device including delay compensation circuit

SAMSUNG ELECTRONICS CO LTD0 citations61

US11475955B2Oct 18, 2022

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD1 citations61

US11336266B2May 17, 2022

Method of operating a system including a parameter monitoring circuit

SAMSUNG ELECTRONICS CO LTD0 citations61

US11736098B2Aug 22, 2023

Memory package, semiconductor device, and storage device

SAMSUNG ELECTRONICS CO LTD1 citations60

US12518805B2Jan 6, 2026

Memory chip, memory controller and operating method of the memory chip

SAMSUNG ELECTRONICS CO LTD0 citations58

US11783874B2Oct 10, 2023

Memory with swap mode

SAMSUNG ELECTRONICS CO LTD1 citations58

US11581025B2Feb 14, 2023

High resolution ZQ calibration method using hidden least significant bit (HLSB)

SAMSUNG ELECTRONICS CO LTD0 citations58

US12237046B2Feb 25, 2025

Memory system including an interface circuit connecting a controller and memory

SAMSUNG ELECTRONICS CO LTD0 citations51

US11810638B2Nov 7, 2023

Memory device including multiple memory chips and data signal lines and a method of operating the memory device

SAMSUNG ELECTRONICS CO LTD0 citations51

US9767873B2Sep 19, 2017

Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations51

US12073917B2Aug 27, 2024

Memory device that includes a duty correction circuit, memory controller that includes a duty sensing circuit, and storage device that includes a memory device

SAMSUNG ELECTRONICS CO LTD0 citations49

US11915781B2Feb 27, 2024

Apparatuses and methods for ZQ calibration

SAMSUNG ELECTRONICS CO LTD0 citations49

US12217793B2Feb 4, 2025

Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations47

JEONG BYUNGHOON

Patents

Memory system performing training operation

Nonvolatile memory device supporting high-efficiency I/O interface

Nonvolatile memory device supporting high-efficiency I/O interface

Nonvolatile memory device and memory system including the same

Memory device including interface circuit and method of operating the same

Multi-chip package with reduced calibration time and ZQ calibration method thereof

Multi-chip package with reduced calibration time and ZQ calibration method thereof

Memory device and memory system including the same

Parameter monitoring circuit for detecting error of parameter, duty cycle correction circuit, and impedance calibration circuit

Impedance calibration circuit and method of calibrating impedance in memory device

Memory device including interface circuit and method of operating the same

Storage device for transmitting data having an embedded command in both directions of a shared channel, and a method of operating the storage device

Memory device and memory system including the same

Nonvolatile memory device supporting high-efficiency I/O interface

Memory device including interface circuit and method of operating the same

Memory device and memory system including the same

Memory device supporting DBI interface and operating method of memory device

Memory device and memory system including the same

Memory device including interface circuit and method of operating the same

Semiconductor device including delay compensation circuit

Semiconductor device including delay compensation circuit

Multi-chip package with reduced calibration time and ZQ calibration method thereof

Method of operating a system including a parameter monitoring circuit

Memory package, semiconductor device, and storage device

Memory chip, memory controller and operating method of the memory chip

Memory with swap mode

High resolution ZQ calibration method using hidden least significant bit (HLSB)

Memory system including an interface circuit connecting a controller and memory

Memory device including multiple memory chips and data signal lines and a method of operating the memory device

Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device

Memory device that includes a duty correction circuit, memory controller that includes a duty sensing circuit, and storage device that includes a memory device

Apparatuses and methods for ZQ calibration

Data transfer circuits in nonvolatile memory devices and nonvolatile memory devices including the same