Inventor

KOH GWAN-HYEOB

KR70 patents

⚠️ This page may combine multiple inventors who share the name “KOH GWAN-HYEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOH GWAN-HYEOB

SAMSUNG ELECTRONICS CO LTD

Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same

CMOS image sensor (CIS) including MRAM (magnetic random access memory)

Method of forming a phase change memory device having a small area of contact

Method for fabricating MOS transistor

Memory device and method of manufacturing the same

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Memory device and electronic apparatus including the same

Non-volatile memory devices including stacked NAND-type resistive memory cell strings

Methods for forming integrated circuit devices through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region and integrated circuit devices formed thereby

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-change memory device having a barrier layer and manufacturing method

Method for forming a dielectric layer

Integrated circuit devices and methods of manufacturing same

Memory device and method of manufacturing the same

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Memory device and method of manufacturing the same

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Variable resistance memory devices and methods of manufacturing the same

Semiconductor apparatus including magnetoresistive device

Magnetoresistive random access memory device and method of manufacturing the same

Integrated circuit devices formed through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region

Method of fabricating contact pads of a semiconductor device

Method of forming a self-aligned contact pad for a semiconductor device

Semiconductor devices including spin-orbit torque line and contact plug

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Semiconductor device including variable resistance memory device

Memory device and method of manufacturing the same

Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer

Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the same

Semiconductor device including variable resistance memory device

Magnetic random access memory (MRAM)-based frame buffering apparatus, display driving apparatus and display apparatus including the same

Semiconductor devices

Semiconductor apparatus including magnetoresistive device

Memory device and electronic apparatus including the same

Memory device and method of manufacturing the same

Semiconductor devices

Semiconductor device, magnetoresistive random access memory device, and semiconductor chip including the same

Image sensor including MRAM (magnetic random access memory)

Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer

Semiconductor devices including spin-orbit torque line and contact plug

Semiconductor devices and methods of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Memory device with temperature-dependent reading of a reference cell

KIM SUNG WOO

Integrated circuit devices including separate memory cells on separate regions of individual substrate

KOH GWAN-HYEOB

Multi-level memory devices and methods of operating the same

SUH KI-SEOK

Magnetoresistive random access memory device and method of manufacturing the same

BAK JUNG HOON

Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the same

SEO BO YOUNG

Memory apparatuses having ground switches

SEO BO-YOUNG

Semiconductor memory device including shorted variable resistor element of memory cell