Inventor
KIM JINGYUN
KR38 patents
⚠️ This page may combine multiple inventors who share the name “KIM JINGYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS9076879B2Jul 7, 2015
Three-dimensional semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations97
US9735170B2Aug 15, 2017
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations92
US9245839B2Jan 26, 2016
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations92
US8008722B2Aug 30, 2011
Multi-layer nonvolatile memory devices having vertical charge storage regions
SAMSUNG ELECTRONICS CO LTD50 citations91
US11121163B2Sep 14, 2021
Image sensor
SAMSUNG ELECTRONICS CO LTD4 citations84
US10546872B2Jan 28, 2020
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US9899411B2Feb 20, 2018
Three-dimensional semiconductor memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US9312270B2Apr 12, 2016
Methods of manufacturing three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD7 citations82
US11871571B2Jan 9, 2024
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11843016B2Dec 12, 2023
Image sensor
SAMSUNG ELECTRONICS CO LTD2 citations73
US11387249B2Jul 12, 2022
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9716102B2Jul 25, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10840285B2Nov 17, 2020
Image sensor
SAMSUNG ELECTRONICS CO LTD4 citations72
US9559111B2Jan 31, 2017
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11948956B2Apr 2, 2024
Image sensors including an amorphous region and an electron suppression region
SAMSUNG ELECTRONICS CO LTD2 citations70
US10784301B2Sep 22, 2020
Image sensors including an amorphous region and an electron suppression region
SAMSUNG ELECTRONICS CO LTD4 citations70
US12543396B2Feb 3, 2026
Image sensor having improved electrical and/or optical characteristics
SAMSUNG ELECTRONICS CO LTD0 citations62
US12490433B2Dec 2, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12464721B2Nov 4, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12336177B2Jun 17, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50280EJan 21, 2025
Semiconductor memory device having insulation patterns and cell gate patterns
SAMSUNG ELECTRONICS CO LTD0 citations62
US12094907B2Sep 17, 2024
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations62
US9466612B2Oct 11, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9257441B2Feb 9, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US12302661B2May 13, 2025
Image sensor including reflective structure including a reflective structure
SAMSUNG ELECTRONICS CO LTD0 citations59
US12302660B2May 13, 2025
Image sensor including reflective structure including a reflective structure
SAMSUNG ELECTRONICS CO LTD0 citations59
US9972638B2May 15, 2018
Methods of fabricating three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11819860B2Nov 21, 2023
Belt-type electric dust collection device and air conditioner having same
SAMSUNG ELECTRONICS CO LTD0 citations48
KIM JINGYUN
6 patentsUS8415742B2Apr 9, 2013
Semiconductor memory device and method of forming the same
KIM JINGYUN34 citations96
US8329537B2Dec 11, 2012
Method for fabricating rewritable three-dimensional memory device
KIM JINGYUN23 citations92
US8173533B2May 8, 2012
Semiconductor memory device and method of forming the same
KIM JINGYUN15 citations92
US8084819B2Dec 27, 2011
Semiconductor memory device having insulation patterns and cell gate patterns
KIM JINGYUN30 citations92
US8460998B2Jun 11, 2013
Method of fabricating semiconductor device
KIM JINGYUN5 citations83
US9293335B2Mar 22, 2016
Method of fabricating semiconductor device
KIM JINGYUN1 citations62