Inventor

FANG ZIWEI

TW172 patents

⚠️ This page may combine multiple inventors who share the name “FANG ZIWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FANG ZIWEI

TAIWAN SEMICONDUCTOR MFG CO LTD

Dual metal capped via contact structures for semiconductor devices

Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers

Method for fabricating fin field effect transistor and semiconductor device

Method of manufacturing a semiconductor device and a semiconductor device

Interlayer dielectric film in semiconductor devices

Gate structure and patterning method for multiple threshold voltages

Work function layers for transistor gate electrodes

Gate structures for semiconductor devices

Semiconductor structure with air gap and method sealing the air gap

Method for forming metal cap layers to improve performance of semiconductor structure

Gate structure and patterning method for multiple threshold voltages

Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same

Conformal transfer doping method for fin-like field effect transistor

Interlayer dielectric film in semiconductor devices

Directional patterning methods

Field effect transistor contact with reduced contact resistance

FinFET device and method of forming the same

Source/drain junction formation

Gate structures for semiconductor devices

Conformal transfer doping method for fin-like field effect transistor

Semiconductor device structure

Selective internal gate structure for ferroelectric semiconductor devices

Low resistance fill metal layer material as stressor in metal gates

Ultraviolet radiation activated atomic layer deposition

Gate structure, semiconductor device and the method of forming semiconductor device

Multi-threshold gate structure with doped gate dielectric layer

Method for forming semiconductor device structure

Semiconductor device structure and method for forming the same

Selective internal gate structure for ferroelectric semiconductor devices

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor arrangement and method of manufacture

VARIAN SEMICONDUCTOR EQUIPMENT

Hollow cathode for plasma doping system

Method and apparatus for low voltage plasma doping using dual pulses

Dose monitor for plasma doping system

Method and apparatus for low voltage plasma doping using dual pulses

Hollow cathode for plasma doping system

Technique for monitoring and controlling a plasma process

Dose monitor for plasma doping system

Technique for boron implantation

Methods for stable and repeatable ion implantation

Technique for monitoring and controlling a plasma process

Monitoring plasma ion implantation systems for fault detection and process control

Profile adjustment in plasma ion implanter

TAIWAN SEMICONDUCTOR MFG

FinFET/tri-gate channel doping for multiple threshold voltage tuning

Methods for forming FinFETs with self-aligned source/drain

Methods for forming FinFETs having multiple threshold voltages

FANG ZIWEI

Self-aligned source and drain structures and method of manufacturing same

Method of forming a semiconductor device

HUANG YU-LIEN

Doped oxide for shallow trench isolation (STI)

ENGLAND JONATHAN GERALD

Techniques for temperature-controlled ion implantation