Inventor
LIU KUAN-TING
US41 patents
⚠️ This page may combine multiple inventors who share the name “LIU KUAN-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS9837507B1Dec 5, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9590065B2Mar 7, 2017
Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10504789B1Dec 10, 2019
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11075124B2Jul 27, 2021
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699966B2Jun 30, 2020
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269918B2Apr 23, 2019
N-work function metal with crystal structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10157998B2Dec 18, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11594610B2Feb 28, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11270994B2Mar 8, 2022
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11075275B2Jul 27, 2021
Metal gate fill for short-channel and long-channel semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11990522B2May 21, 2024
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527622B2Dec 13, 2022
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12176251B2Dec 24, 2024
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170280B2Dec 17, 2024
Method of manufacturing gate structure and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148810B2Nov 19, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855083B2Dec 26, 2023
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11804409B2Oct 31, 2023
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133395B2Sep 28, 2021
N-work function metal with crystal structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9698019B2Jul 4, 2017
N-work function metal with crystal structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12142531B2Nov 12, 2024
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11322411B2May 3, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302582B2Apr 12, 2022
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12382691B2Aug 5, 2025
Effective work function tuning via silicide induced interface dipole modulation for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12520554B2Jan 6, 2026
Area-selective removal and selective metal cap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12484275B2Nov 25, 2025
Gate structures for multi-gate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12336244B2Jun 17, 2025
Metal caps for gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12288811B2Apr 29, 2025
Metal gate for gate-all-around devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12094948B2Sep 17, 2024
Forming low-resistance capping layer over metal gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
NINGBO KING MOUNT CO LTD
5 patentsUS11648658B2May 16, 2023
Screwdriver structure
NINGBO KING MOUNT CO LTD1 citations61
US11311986B2Apr 26, 2022
Screwdriver rotation structure
NINGBO KING MOUNT CO LTD1 citations61
US12370657B2Jul 29, 2025
Hex wrench structure
NINGBO KING MOUNT CO LTD0 citations51
US12076849B2Sep 3, 2024
Hex wrench holder structure
NINGBO KING MOUNT CO LTD0 citations51
US12023796B2Jul 2, 2024
Tool box assembly
NINGBO KING MOUNT CO LTD0 citations51
APPLIED MATERIALS INC
4 patentsUS12125699B2Oct 22, 2024
Selective carbon deposition on top and bottom surfaces of semiconductor substrates
APPLIED MATERIALS INC0 citations58
US12002705B2Jun 4, 2024
Methods and apparatus for forming backside power rails
APPLIED MATERIALS INC0 citations56
US12237149B2Feb 25, 2025
Reducing aspect ratio dependent etch with direct current bias pulsing
APPLIED MATERIALS INC0 citations43
US9236255B2Jan 12, 2016
Methods for forming three dimensional NAND structures atop a substrate
APPLIED MATERIALS INC0 citations39