P

Inventor

LIU KUAN-TING

US41 patents
⚠️ This page may combine multiple inventors who share the name “LIU KUAN-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

28 patents
US9837507B1Dec 5, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9590065B2Mar 7, 2017

Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10504789B1Dec 10, 2019

Pre-deposition treatment for FET technology and devices formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11075124B2Jul 27, 2021

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699966B2Jun 30, 2020

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269918B2Apr 23, 2019

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10157998B2Dec 18, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11594610B2Feb 28, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11270994B2Mar 8, 2022

Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11075275B2Jul 27, 2021

Metal gate fill for short-channel and long-channel semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11990522B2May 21, 2024

Effective work function tuning via silicide induced interface dipole modulation for metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527622B2Dec 13, 2022

Effective work function tuning via silicide induced interface dipole modulation for metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12176251B2Dec 24, 2024

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170280B2Dec 17, 2024

Method of manufacturing gate structure and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148810B2Nov 19, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855083B2Dec 26, 2023

Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11804409B2Oct 31, 2023

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133395B2Sep 28, 2021

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9698019B2Jul 4, 2017

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12142531B2Nov 12, 2024

Pre-deposition treatment for FET technology and devices formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11322411B2May 3, 2022

Pre-deposition treatment for FET technology and devices formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11302582B2Apr 12, 2022

Pre-deposition treatment for FET technology and devices formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12382691B2Aug 5, 2025

Effective work function tuning via silicide induced interface dipole modulation for metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12520554B2Jan 6, 2026

Area-selective removal and selective metal cap

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12484275B2Nov 25, 2025

Gate structures for multi-gate devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12336244B2Jun 17, 2025

Metal caps for gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12288811B2Apr 29, 2025

Metal gate for gate-all-around devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12094948B2Sep 17, 2024

Forming low-resistance capping layer over metal gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

NINGBO KING MOUNT CO LTD

5 patents

APPLIED MATERIALS INC

4 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

LIU KUAN-TING

1 patent

UNIV CHANG GUNG

1 patent