Inventor
TOKUYAMA TAKASHI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “TOKUYAMA TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
8 patentsUS4565584AJan 21, 1986
Method of producing single crystal film utilizing a two-step heat treatment
HITACHI LTD76 citations95
US4609407ASep 2, 1986
Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
HITACHI LTD83 citations94
US4533831AAug 6, 1985
Non-mass-analyzed ion implantation
HITACHI LTD31 citations92
US4498951AFeb 12, 1985
Method of manufacturing single-crystal film
HITACHI LTD39 citations92
US4394191AJul 19, 1983
Stacked polycrystalline silicon film of high and low conductivity layers
HITACHI LTD33 citations92
US3967310AJun 29, 1976
Semiconductor device having controlled surface charges by passivation films formed thereon
HITACHI LTD47 citations92
US4570175AFeb 11, 1986
Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
HITACHI LTD11 citations74
US4351674ASep 28, 1982
Method of producing a semiconductor device
HITACHI LTD13 citations74