Inventor
ROBB FRANCINE Y
US37 patents
⚠️ This page may combine multiple inventors who share the name “ROBB FRANCINE Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND
16 patentsUS6204097B1Mar 20, 2001
Semiconductor device and method of manufacture
SEMICONDUCTOR COMPONENTS IND182 citations99
US7579632B2Aug 25, 2009
Multi-channel ESD device and method therefor
SEMICONDUCTOR COMPONENTS IND62 citations97
US7537970B2May 26, 2009
Bi-directional transistor with by-pass path and method therefor
SEMICONDUCTOR COMPONENTS IND15 citations93
US7030447B2Apr 18, 2006
Low voltage transient voltage suppressor
SEMICONDUCTOR COMPONENTS IND22 citations92
US6953980B2Oct 11, 2005
Semiconductor filter circuit and method
SEMICONDUCTOR COMPONENTS IND37 citations92
US6515345B2Feb 4, 2003
Transient voltage suppressor with diode overlaying another diode for conserving space
SEMICONDUCTOR COMPONENTS IND24 citations92
US7538395B2May 26, 2009
Method of forming low capacitance ESD device and structure therefor
SEMICONDUCTOR COMPONENTS IND31 citations91
US7297603B2Nov 20, 2007
Bi-directional transistor and method therefor
SEMICONDUCTOR COMPONENTS IND42 citations89
US6392266B1May 21, 2002
Transient suppressing device and method
SEMICONDUCTOR COMPONENTS IND39 citations89
US7910409B2Mar 22, 2011
Bi-directional transistor with by-pass path and method therefor
SEMICONDUCTOR COMPONENTS IND8 citations84
US7102199B2Sep 5, 2006
Low voltage transient voltage suppressor and method of making
SEMICONDUCTOR COMPONENTS IND11 citations84
US8039359B2Oct 18, 2011
Method of forming low capacitance ESD device and structure therefor
SEMICONDUCTOR COMPONENTS IND8 citations83
US6633063B2Oct 14, 2003
Low voltage transient voltage suppressor and method of making
SEMICONDUCTOR COMPONENTS IND6 citations73
US8350318B2Jan 8, 2013
Method of forming an MOS transistor and structure therefor
SEMICONDUCTOR COMPONENTS IND4 citations63
US7714381B2May 11, 2010
Method of forming an integrated power device and structure
SEMICONDUCTOR COMPONENTS IND3 citations63
US8035161B2Oct 11, 2011
Semiconductor component
SEMICONDUCTOR COMPONENTS IND0 citations51
MOTOROLA INC
10 patentsUS5266515ANov 30, 1993
Fabricating dual gate thin film transistors
MOTOROLA INC241 citations99
US5268326ADec 7, 1993
Method of making dielectric and conductive isolated island
MOTOROLA INC63 citations95
US5155563AOct 13, 1992
Semiconductor device having low source inductance
MOTOROLA INC105 citations95
US4847214AJul 11, 1989
Method for filling trenches from a seed layer
MOTOROLA INC71 citations92
US4601778AJul 22, 1986
Maskless etching of polysilicon
MOTOROLA INC34 citations92
US4529860AJul 16, 1985
Plasma etching of organic materials
MOTOROLA INC53 citations92
US5589408ADec 31, 1996
Method of forming an alloyed drain field effect transistor and device formed
MOTOROLA INC22 citations91
US5747371AMay 5, 1998
Method of manufacturing vertical MOSFET
MOTOROLA INC15 citations73
US5369304ANov 29, 1994
Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor
MOTOROLA INC6 citations73
US5567649AOct 22, 1996
Method of forming a conductive diffusion barrier
MOTOROLA INC5 citations58
ROBB FRANCINE Y
4 patentsUS8530284B2Sep 10, 2013
Method of forming a bi-directional transistor with by-pass path
ROBB FRANCINE Y7 citations83
US8101969B2Jan 24, 2012
Bi-directional transistor with by-pass path and method therefor
ROBB FRANCINE Y9 citations83
US8207035B2Jun 26, 2012
Method of forming an integrated power device and structure
ROBB FRANCINE Y2 citations62
US8748262B2Jun 10, 2014
Method of forming an integrated power device and structure
ROBB FRANCINE Y0 citations51