Inventor

PAN JAMES N

US20 patents

⚠️ This page may combine multiple inventors who share the name “PAN JAMES N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PAN JAMES N

ADVANCED MICRO DEVICES INC

Method of fabricating an integrated circuit channel region

Formation of finFET using a sidewall epitaxial layer

Self aligned double gate transistor having a strained channel region and process therefor

Method of growing as a channel region to reduce source/drain junction capacitance

Semiconductor on insulator MOSFET having strained silicon channel

Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift

Engineered metal gate electrode

Strained silicon semiconductor on insulator MOSFET

Engineered metal gate electrode

Replacement gate strained silicon finFET process

Strained silicon MOSFETs having improved thermal dissipation

One step deposition method for high-k dielectric and metal gate electrode

Shallow trench isolation process and structure with minimized strained silicon consumption

Methods for fabricating CMOS-compatible lateral bipolar junction transistors

Low-power multiple-channel fully depleted quantum well CMOSFETs

Method for determining metal work function by formation of Schottky diodes with shadow mask

Low-power multiple-channel fully depleted quantum well CMOSFETs

Replacement metal gate transistors with reduced gate oxide leakage

PAN JAMES N

Strain enhanced semiconductor devices and methods for their fabrication

GLOBALFOUNDRIES INC

Shallow trench isolation process and structure with minimized strained silicon consumption