Inventor
LEE WOON-KYUNG
KR58 patents
⚠️ This page may combine multiple inventors who share the name “LEE WOON-KYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS6207490B1Mar 27, 2001
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD146 citations99
US6555865B2Apr 29, 2003
Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD96 citations97
US6635532B2Oct 21, 2003
Method for fabricating NOR type flash memory device
SAMSUNG ELECTRONICS CO LTD36 citations92
US6122188ASep 19, 2000
Non-volatile memory device having multi-bit cell structure and a method of programming same
SAMSUNG ELECTRONICS CO LTD21 citations87
US9299716B2Mar 29, 2016
Methods of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations84
US8036043B2Oct 11, 2011
Nonvolatile semiconductor device and memory system including the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US6933195B2Aug 23, 2005
Method of fabricating a flash memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US5721698AFeb 24, 1998
Read only memory device and manufacturing method
SAMSUNG ELECTRONICS CO LTD16 citations81
US7589374B2Sep 15, 2009
Semiconductor device and related fabrication method
SAMSUNG ELECTRONICS CO LTD7 citations74
US7057226B2Jun 6, 2006
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6531360B2Mar 11, 2003
Method of manufacturing a flash memory device
SAMSUNG ELECTRONICS CO LTD8 citations74
US6448112B2Sep 10, 2002
Cell array region of a NOR-type mask ROM device and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD11 citations74
US6150700ANov 21, 2000
Advanced nor-type mask ROM
SAMSUNG ELECTRONICS CO LTD10 citations74
US10461030B2Oct 29, 2019
Pad structures and wiring structures in a vertical type semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US9305830B2Apr 5, 2016
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US6346733B1Feb 12, 2002
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD8 citations72
US5923606AJul 13, 1999
NOR-type mask ROM having dual sense current paths
SAMSUNG ELECTRONICS CO LTD14 citations72
US5846863ADec 8, 1998
Method for manufacturing a semiconductor ROM device
SAMSUNG ELECTRONICS CO LTD13 citations72
USRE47169EDec 18, 2018
NAND flash memory device and method of making same
SAMSUNG ELECTRONICS CO LTD1 citations63
US7847332B2Dec 7, 2010
Nonvolatile memory devices with oblique charge storage regions and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7687860B2Mar 30, 2010
Semiconductor device including impurity regions having different cross-sectional shapes
SAMSUNG ELECTRONICS CO LTD5 citations63
US7592664B2Sep 22, 2009
Nonvolatile memory structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7579244B2Aug 25, 2009
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7494871B2Feb 24, 2009
Semiconductor memory devices and methods for forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7397130B2Jul 8, 2008
Semiconductor devices with contact holes self-aligned in two directions
SAMSUNG ELECTRONICS CO LTD5 citations63
US7388249B2Jun 17, 2008
Semiconductor device having self-aligned gate pattern
SAMSUNG ELECTRONICS CO LTD2 citations63
US6573574B2Jun 3, 2003
Cell array region of a NOR-type mask ROM device and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD2 citations63
US5920784AJul 6, 1999
Method for manufacturing a buried transistor
SAMSUNG ELECTRONICS CO LTD4 citations63
US8350344B2Jan 8, 2013
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US7015087B2Mar 21, 2006
Gate-contact structure and method for forming the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US6855978B2Feb 15, 2005
Gate-contact structure and method for forming the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US6291308B1Sep 18, 2001
Mask ROM fabrication method
SAMSUNG ELECTRONICS CO LTD4 citations60
US8933517B2Jan 13, 2015
Semiconductor device comprising a dummy well
SAMSUNG ELECTRONICS CO LTD0 citations52
OH DONG-YEAN
3 patentsUS8243518B2Aug 14, 2012
NAND flash memory device and method of making same
OH DONG-YEAN59 citations97
US8456918B2Jun 4, 2013
NAND flash memory device and method of operating same to reduce a difference between channel potentials therein
OH DONG-YEAN39 citations93
US8654585B2Feb 18, 2014
NAND flash memory device and method of making same
OH DONG-YEAN16 citations92
HWANG SUNG-MIN
2 patentsSAMSUNG ELECTRO MECH
2 patentsLEE SEUNG-JUN
2 patentsUS8264025B2Sep 11, 2012
Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion
LEE SEUNG-JUN5 citations63
US8187967B2May 29, 2012
Method of manufacturing a non-volatile memory device
LEE SEUNG-JUN4 citations60
KIM JONG-WON
2 patentsPARK SANG-YONG
1 patentLIM JU-YOUNG
1 patentKIM JU-HYUNG
1 patentSHIM JAE-JOO
1 patentSUMSUNG ELECTRONICS CO LTD
1 patentOH DONGYEAN
1 patentShowing the top 50 of 58 patents by PatentIndex Score.