P

Inventor

KANG SANG-SEOK

KR63 patents
⚠️ This page may combine multiple inventors who share the name “KANG SANG-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

41 patents
US6392938B1May 21, 2002

Semiconductor memory device and method of identifying programmed defective address thereof

SAMSUNG ELECTRONICS CO LTD38 citations93
US6898139B2May 24, 2005

Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operation

SAMSUNG ELECTRONICS CO LTD19 citations92
US6498526B2Dec 24, 2002

Fuse circuit and program status detecting method thereof

SAMSUNG ELECTRONICS CO LTD40 citations92
US5929696AJul 27, 1999

Circuit for converting internal voltage of semiconductor device

SAMSUNG ELECTRONICS CO LTD43 citations92
US5914626AJun 22, 1999

Voltage clamping circuit for semiconductor devices

SAMSUNG ELECTRONICS CO LTD30 citations91
US6346738B1Feb 12, 2002

Fuse option circuit of integrated circuit and method thereof

SAMSUNG ELECTRONICS CO LTD25 citations90
US6111457AAug 29, 2000

Internal power supply circuit for use in a semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations90
US5867434AFeb 2, 1999

Integrated circuit memory devices having dummy memory cells therein for inhibiting memory failures

SAMSUNG ELECTRONICS CO LTD31 citations89
US7057217B2Jun 6, 2006

Fuse arrangement and integrated circuit device using the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6490222B2Dec 3, 2002

Decoding circuit for controlling activation of wordlines in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD15 citations84
US7649760B2Jan 19, 2010

Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same

SAMSUNG ELECTRONICS CO LTD15 citations83
US7558993B2Jul 7, 2009

Test apparatus for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations83
US7016248B2Mar 21, 2006

Method and apparatus for controlling a high voltage generator in a wafer burn-in test

SAMSUNG ELECTRONICS CO LTD12 citations83
US6658612B1Dec 2, 2003

Test signal generating circuit of a semiconductor device with pins receiving signals of multiple voltage levels and method for invoking test modes

SAMSUNG ELECTRONICS CO LTD17 citations83
US7460428B2Dec 2, 2008

Dynamic random access memory and communications terminal including the same

SAMSUNG ELECTRONICS CO LTD11 citations81
US7295488B2Nov 13, 2007

Apparatus and methods for generating a column select line signal in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations74
US6788132B2Sep 7, 2004

Voltage and time control circuits

SAMSUNG ELECTRONICS CO LTD12 citations74
US6483373B1Nov 19, 2002

Input circuit having signature circuits in parallel in semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations74
US6438042B1Aug 20, 2002

Arrangement of bitline boosting capacitor in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US6215723B1Apr 10, 2001

Semiconductor memory device having sequentially disabling activated word lines

SAMSUNG ELECTRONICS CO LTD9 citations74
US6140704AOct 31, 2000

Integrated circuit memory devices with improved twisted bit-line structures

SAMSUNG ELECTRONICS CO LTD9 citations74
US6225818B1May 1, 2001

Integrated circuits including function identification circuits having operating modes that identify corresponding functions of the integrated circuits

SAMSUNG ELECTRONICS CO LTD10 citations73
US7173872B2Feb 6, 2007

Method and apparatus for controlling a high voltage generator in a wafer burn-in test

SAMSUNG ELECTRONICS CO LTD7 citations72
US6861682B2Mar 1, 2005

Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same

SAMSUNG ELECTRONICS CO LTD7 citations72
US6850450B2Feb 1, 2005

Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell

SAMSUNG ELECTRONICS CO LTD10 citations72
US9672891B2Jun 6, 2017

Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory module

SAMSUNG ELECTRONICS CO LTD3 citations71
US6028797AFeb 22, 2000

Multi-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits therein

SAMSUNG ELECTRONICS CO LTD8 citations71
US5949724ASep 7, 1999

Burn-in stress circuit for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD11 citations69
US7675316B2Mar 9, 2010

Semiconductor memory device including on die termination circuit and on die termination method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US7161407B2Jan 9, 2007

Fuse circuit with controlled fuse burn out and method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US6751148B2Jun 15, 2004

Circuit for generating control signal using make-link type fuse

SAMSUNG ELECTRONICS CO LTD4 citations63
US6459636B2Oct 1, 2002

Mode selection circuit for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations63
US6345011B2Feb 5, 2002

Input/output line structure of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US9026870B2May 5, 2015

Memory module and a memory test system for testing the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7624317B2Nov 24, 2009

Parallel bit test circuit and method for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7466616B2Dec 16, 2008

Bit line sense amplifier and method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US7391254B2Jun 24, 2008

Circuit and method of generating internal supply voltage in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations62
US6972612B2Dec 6, 2005

Semiconductor device with malfunction control circuit and controlling method thereof

SAMSUNG ELECTRONICS CO LTD2 citations62
US9286956B2Mar 15, 2016

Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory module

SAMSUNG ELECTRONICS CO LTD2 citations60
US6396756B1May 28, 2002

Integrated circuit memory devices including transmission parts that are adjacent input/output selection parts

SAMSUNG ELECTRONICS CO LTD2 citations60
US6084808AJul 4, 2000

Circuits and methods for burn-in of integrated circuits using potential differences between adjacent main word lines

SAMSUNG ELECTRONICS CO LTD2 citations58

LIM JONG HYOUNG

2 patents

KANG SANG-SEOK

2 patents

KANG SANG SEOK

2 patents

JOO JAE HOON

1 patent

HONG MIN-KI

1 patent

CHOI JONG-HYUN

1 patent

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