Inventor
KANG SANG-SEOK
KR63 patents
⚠️ This page may combine multiple inventors who share the name “KANG SANG-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
41 patentsUS6392938B1May 21, 2002
Semiconductor memory device and method of identifying programmed defective address thereof
SAMSUNG ELECTRONICS CO LTD38 citations93
US6898139B2May 24, 2005
Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operation
SAMSUNG ELECTRONICS CO LTD19 citations92
US6498526B2Dec 24, 2002
Fuse circuit and program status detecting method thereof
SAMSUNG ELECTRONICS CO LTD40 citations92
US5929696AJul 27, 1999
Circuit for converting internal voltage of semiconductor device
SAMSUNG ELECTRONICS CO LTD43 citations92
US5914626AJun 22, 1999
Voltage clamping circuit for semiconductor devices
SAMSUNG ELECTRONICS CO LTD30 citations91
US6346738B1Feb 12, 2002
Fuse option circuit of integrated circuit and method thereof
SAMSUNG ELECTRONICS CO LTD25 citations90
US6111457AAug 29, 2000
Internal power supply circuit for use in a semiconductor device
SAMSUNG ELECTRONICS CO LTD26 citations90
US5867434AFeb 2, 1999
Integrated circuit memory devices having dummy memory cells therein for inhibiting memory failures
SAMSUNG ELECTRONICS CO LTD31 citations89
US7057217B2Jun 6, 2006
Fuse arrangement and integrated circuit device using the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6490222B2Dec 3, 2002
Decoding circuit for controlling activation of wordlines in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7649760B2Jan 19, 2010
Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US7558993B2Jul 7, 2009
Test apparatus for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations83
US7016248B2Mar 21, 2006
Method and apparatus for controlling a high voltage generator in a wafer burn-in test
SAMSUNG ELECTRONICS CO LTD12 citations83
US6658612B1Dec 2, 2003
Test signal generating circuit of a semiconductor device with pins receiving signals of multiple voltage levels and method for invoking test modes
SAMSUNG ELECTRONICS CO LTD17 citations83
US7460428B2Dec 2, 2008
Dynamic random access memory and communications terminal including the same
SAMSUNG ELECTRONICS CO LTD11 citations81
US7295488B2Nov 13, 2007
Apparatus and methods for generating a column select line signal in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations74
US6788132B2Sep 7, 2004
Voltage and time control circuits
SAMSUNG ELECTRONICS CO LTD12 citations74
US6483373B1Nov 19, 2002
Input circuit having signature circuits in parallel in semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations74
US6438042B1Aug 20, 2002
Arrangement of bitline boosting capacitor in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US6215723B1Apr 10, 2001
Semiconductor memory device having sequentially disabling activated word lines
SAMSUNG ELECTRONICS CO LTD9 citations74
US6140704AOct 31, 2000
Integrated circuit memory devices with improved twisted bit-line structures
SAMSUNG ELECTRONICS CO LTD9 citations74
US6225818B1May 1, 2001
Integrated circuits including function identification circuits having operating modes that identify corresponding functions of the integrated circuits
SAMSUNG ELECTRONICS CO LTD10 citations73
US7173872B2Feb 6, 2007
Method and apparatus for controlling a high voltage generator in a wafer burn-in test
SAMSUNG ELECTRONICS CO LTD7 citations72
US6861682B2Mar 1, 2005
Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US6850450B2Feb 1, 2005
Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cell
SAMSUNG ELECTRONICS CO LTD10 citations72
US9672891B2Jun 6, 2017
Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory module
SAMSUNG ELECTRONICS CO LTD3 citations71
US6028797AFeb 22, 2000
Multi-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits therein
SAMSUNG ELECTRONICS CO LTD8 citations71
US5949724ASep 7, 1999
Burn-in stress circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations69
US7675316B2Mar 9, 2010
Semiconductor memory device including on die termination circuit and on die termination method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7161407B2Jan 9, 2007
Fuse circuit with controlled fuse burn out and method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6751148B2Jun 15, 2004
Circuit for generating control signal using make-link type fuse
SAMSUNG ELECTRONICS CO LTD4 citations63
US6459636B2Oct 1, 2002
Mode selection circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US6345011B2Feb 5, 2002
Input/output line structure of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US9026870B2May 5, 2015
Memory module and a memory test system for testing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7624317B2Nov 24, 2009
Parallel bit test circuit and method for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7466616B2Dec 16, 2008
Bit line sense amplifier and method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7391254B2Jun 24, 2008
Circuit and method of generating internal supply voltage in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US6972612B2Dec 6, 2005
Semiconductor device with malfunction control circuit and controlling method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US9286956B2Mar 15, 2016
Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory module
SAMSUNG ELECTRONICS CO LTD2 citations60
US6396756B1May 28, 2002
Integrated circuit memory devices including transmission parts that are adjacent input/output selection parts
SAMSUNG ELECTRONICS CO LTD2 citations60
US6084808AJul 4, 2000
Circuits and methods for burn-in of integrated circuits using potential differences between adjacent main word lines
SAMSUNG ELECTRONICS CO LTD2 citations58
LIM JONG HYOUNG
2 patentsKANG SANG-SEOK
2 patentsKANG SANG SEOK
2 patentsJOO JAE HOON
1 patentHONG MIN-KI
1 patentCHOI JONG-HYUN
1 patentShowing the top 50 of 63 patents by PatentIndex Score.