Inventor · disambiguated record
William Fenwick
Also filed as: FENWICK WILLIAM · FENWICK WILLIAM E
6 granted patents·2 pending applications·12 citations·filing 2011–2017
74Inventor score
Files withTOSHIBA CORP2BRIDGELUX INC1CHEN ZHEN1FENWICK WILLIAM E1INDUCTOTHERM HEATING & WELDING LTD1
Top patents by PatentIndex Score
8 records- 0186US10174439B2Nucleation of aluminum nitride on a silicon substrate using an ammonia preflowTOSHIBA ELECTRONIC DEVICES & STORAGE CORP·Filed 2017·Granted Jan 8, 2019·5 cites·21 claims
- 0277US8395165B2Laterally contacted blue LED with superlattice current spreading layerCHEN ZHEN·Filed 2011·Granted Mar 12, 2013·3 cites·19 claims
- 0369US8916906B2Boron-containing buffer layer for growing gallium nitride on siliconFENWICK WILLIAM E·Filed 2011·Granted Dec 23, 2014·4 cites·7 claims
- 0454US9617656B2Nucleation of aluminum nitride on a silicon substrate using an ammonia preflowMANUTIUS IP INC·Filed 2014·Granted Apr 11, 2017·0 cites·17 claims
- 0546US2013026480A1Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia PreflowBRIDGELUX INC·Filed 2011·Application pending·0 cites
- 0640US9735240B2High electron mobility transistor (HEMT)TOSHIBA CORP·Filed 2015·Granted Aug 15, 2017·0 cites·41 claims
- 0739US2015255589A1Indium-containing contact and barrier layer for iii-nitride high electron mobility transistor devicesTOSHIBA CORP·Filed 2014·Application pending·0 cites
- 0833US9544950B2Electric induction heating and coating of the exterior surface of a pipeINDUCTOTHERM HEATING & WELDING LTD·Filed 2013·Granted Jan 10, 2017·0 cites·17 claims
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