Inventor
KIM DOO GON
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KIM DOO GON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS8031544B2Oct 4, 2011
Semiconductor memory device with three-dimensional array and repair method thereof
SAMSUNG ELECTRONICS CO LTD269 citations99
US7539041B2May 26, 2009
Floating body semiconductor memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD98 citations97
US7940578B2May 10, 2011
Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods
SAMSUNG ELECTRONICS CO LTD30 citations92
US7843733B2Nov 30, 2010
Flash memory devices having three dimensional stack structures and methods of driving same
SAMSUNG ELECTRONICS CO LTD29 citations92
US7633785B2Dec 15, 2009
Semiconductor memory device and method of generating chip enable signal thereof
SAMSUNG ELECTRONICS CO LTD21 citations92
US7911835B2Mar 22, 2011
Programming and reading five bits of data in two non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD12 citations84
US7773427B2Aug 10, 2010
Non-volatile memory device and method of operating
SAMSUNG ELECTRONICS CO LTD10 citations84
US7672166B2Mar 2, 2010
Method of programming in a non-volatile memory device and non-volatile memory device for performing the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US7778085B2Aug 17, 2010
Method of erasing in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations74
US7649775B2Jan 19, 2010
Flash memory device applying erase voltage
SAMSUNG ELECTRONICS CO LTD7 citations74
USRE46994EAug 14, 2018
Flash memory devices having three dimensional stack structures and methods of driving same
SAMSUNG ELECTRONICS CO LTD4 citations73
US7957199B2Jun 7, 2011
Method of erasing in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7848155B2Dec 7, 2010
Non-volatile memory system including spare array and method of erasing a block in the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7933154B2Apr 26, 2011
Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US7609571B2Oct 27, 2009
Semiconductor memory device having a control unit receiving a sensing block selection address signal and related method
SAMSUNG ELECTRONICS CO LTD4 citations62
KIM DOO GON
3 patentsUS8451643B2May 28, 2013
Semiconductor memory device rewriting data after execution of multiple read operations
KIM DOO GON11 citations83
US8427872B2Apr 23, 2013
Nonvolatile memory device and system performing repair operation for defective memory cell
KIM DOO GON10 citations83
US8144517B2Mar 27, 2012
Multilayered nonvolatile memory with adaptive control
KIM DOO GON1 citations51