P

Inventor

KIM DOO GON

KR22 patents
⚠️ This page may combine multiple inventors who share the name “KIM DOO GON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US8031544B2Oct 4, 2011

Semiconductor memory device with three-dimensional array and repair method thereof

SAMSUNG ELECTRONICS CO LTD269 citations99
US7539041B2May 26, 2009

Floating body semiconductor memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD98 citations97
US7940578B2May 10, 2011

Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods

SAMSUNG ELECTRONICS CO LTD30 citations92
US7843733B2Nov 30, 2010

Flash memory devices having three dimensional stack structures and methods of driving same

SAMSUNG ELECTRONICS CO LTD29 citations92
US7633785B2Dec 15, 2009

Semiconductor memory device and method of generating chip enable signal thereof

SAMSUNG ELECTRONICS CO LTD21 citations92
US7911835B2Mar 22, 2011

Programming and reading five bits of data in two non-volatile memory cells

SAMSUNG ELECTRONICS CO LTD12 citations84
US7773427B2Aug 10, 2010

Non-volatile memory device and method of operating

SAMSUNG ELECTRONICS CO LTD10 citations84
US7672166B2Mar 2, 2010

Method of programming in a non-volatile memory device and non-volatile memory device for performing the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US7778085B2Aug 17, 2010

Method of erasing in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD5 citations74
US7649775B2Jan 19, 2010

Flash memory device applying erase voltage

SAMSUNG ELECTRONICS CO LTD7 citations74
USRE46994EAug 14, 2018

Flash memory devices having three dimensional stack structures and methods of driving same

SAMSUNG ELECTRONICS CO LTD4 citations73
US7957199B2Jun 7, 2011

Method of erasing in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7848155B2Dec 7, 2010

Non-volatile memory system including spare array and method of erasing a block in the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7933154B2Apr 26, 2011

Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US7609571B2Oct 27, 2009

Semiconductor memory device having a control unit receiving a sensing block selection address signal and related method

SAMSUNG ELECTRONICS CO LTD4 citations62

KIM DOO GON

3 patents

KIM DOO-GON

2 patents

JEON BYUNG GIL

1 patent

LEE DONG-HYUK

1 patent