Inventor

ANNUNZIATA ANTHONY J

US99 patents

⚠️ This page may combine multiple inventors who share the name “ANNUNZIATA ANTHONY J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANNUNZIATA ANTHONY J

IBM

Structure and method to reduce shorting in STT-MRAM device

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

Structure and method to reduce shorting in STT-MRAM device

Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Enhanced coercivity in MTJ devices by contact depth control

Magnetic tunnel junction based chip identification

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Forming self-aligned contacts on pillar structures

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

Magnetoresistive structures with stressed layer

Otp mram

Magnetoresistive structures with stressed layer

Magnetic tunnel junction with post-deposition hydrogenation

Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity

Racetrack memory with low-power write

Spin transfer torque magnetic tunnel junction with off-centered current flow

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

Linear MRAM device with a self-aligned bottom contact

Low degradation MRAM encapsulation process using silicon-rich silicon nitride film

Armature-clad MRAM device

Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer

Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity

Linear magnetoresistive random access memory device with a self-aligned contact above MRAM nanowire

Racetrack memory with electric-field assisted domain wall injection for low-power write operation

Short circuit reduction in magnetic tunnel junctions

Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices

Magnetic tunnel junction based anti-fuses with cascoded transistors

Structure and method to reduce shorting and process degradation in stt-MRAM devices

Structure and method to reduce shorting and process degradation in STT-MRAM devices

Magnetic field sensor based on topological insulator and insulating coupler materials

Reduced process degradation of spin torque magnetoresistive random access memory

Structure and method to reduce shorting in STT-MRAM device

Magnetic tunnel junction based anti-fuses with cascoded transistors

Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction

Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction

Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity

Racetrack memory with low-power write

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

Structure for thermally assisted MRAM

Armature-clad MRAM device

Magnetic tunnel junction patterning using low atomic weight ion sputtering

Armature-clad MRAM device

Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer

Linear MRAM device with a self-aligned bottom contact

Injection pillar definition for line MRAM by a self-aligned sidewall transfer

Strain monitoring of MRAM arrays

Enhanced coercivity in MTJ devices by contact depth control

ANNUNZIATA ANTHONY J

Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices