Inventor
WANG SHIH-CHEN
TW38 patents
⚠️ This page may combine multiple inventors who share the name “WANG SHIH-CHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
27 patentsUS8355282B2Jan 15, 2013
Logic-based multiple time programming memory cell
EMEMORY TECHNOLOGY INC17 citations92
US7209392B2Apr 24, 2007
Single poly non-volatile memory
EMEMORY TECHNOLOGY INC40 citations92
US9653173B1May 16, 2017
Memory cell with different program and read paths for achieving high endurance
EMEMORY TECHNOLOGY INC4 citations84
US9042174B2May 26, 2015
Non-volatile memory cell
EMEMORY TECHNOLOGY INC7 citations84
US7447082B2Nov 4, 2008
Method for operating single-poly non-volatile memory device
EMEMORY TECHNOLOGY INC10 citations84
US9425204B2Aug 23, 2016
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC5 citations83
US11164880B2Nov 2, 2021
Multi-time programming non-volatile memory
EMEMORY TECHNOLOGY INC3 citations73
US10224108B2Mar 5, 2019
Non-volatile memory
EMEMORY TECHNOLOGY INC3 citations73
US9153327B2Oct 6, 2015
Flash memory apparatus with voltage boost circuit
EMEMORY TECHNOLOGY INC6 citations73
US8604538B2Dec 10, 2013
Non-volatile semiconductor memory device with intrinsic charge trapping layer
EMEMORY TECHNOLOGY INC1 citations63
US7768059B2Aug 3, 2010
Nonvolatile single-poly memory device
EMEMORY TECHNOLOGY INC5 citations63
US11929434B2Mar 12, 2024
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US11398259B2Jul 26, 2022
Memory cell array of multi-time programmable non-volatile memory
EMEMORY TECHNOLOGY INC1 citations62
US11335805B2May 17, 2022
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US11063772B2Jul 13, 2021
Multi-cell per bit nonvolatile memory unit
EMEMORY TECHNOLOGY INC1 citations62
US9847133B2Dec 19, 2017
Memory array capable of performing byte erase operation
EMEMORY TECHNOLOGY INC1 citations62
US9666279B2May 30, 2017
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC1 citations62
US9633729B2Apr 25, 2017
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC1 citations62
US9524785B2Dec 20, 2016
Memory unit with voltage passing device
EMEMORY TECHNOLOGY INC2 citations62
US8363475B2Jan 29, 2013
Non-volatile memory unit cell with improved sensing margin and reliability
EMEMORY TECHNOLOGY INC3 citations62
US7872898B2Jan 18, 2011
One time programmable read only memory and programming method thereof
EMEMORY TECHNOLOGY INC3 citations62
US7715241B2May 11, 2010
Method for erasing a P-channel non-volatile memory
EMEMORY TECHNOLOGY INC2 citations60
US10642579B2May 5, 2020
Non-volatile memory
EMEMORY TECHNOLOGY INC0 citations52
US9466392B2Oct 11, 2016
Memory array with memory cells arranged in pages
EMEMORY TECHNOLOGY INC0 citations52
US7433243B2Oct 7, 2008
Operation method of non-volatile memory
EMEMORY TECHNOLOGY INC1 citations52
US9792993B2Oct 17, 2017
Memory cell with high endurance for multiple program operations
EMEMORY TECHNOLOGY INC0 citations51
US10181342B2Jan 15, 2019
Method for improving a program speed and an erase speed of a memory
EMEMORY TECHNOLOGY INC0 citations50
LU HAU-YAN
3 patentsUS8174063B2May 8, 2012
Non-volatile semiconductor memory device with intrinsic charge trapping layer
LU HAU-YAN67 citations97
US8390056B2Mar 5, 2013
Non-volatile semiconductor memory device with intrinsic charge trapping layer
LU HAU-YAN3 citations62
US8339831B2Dec 25, 2012
Single polysilicon non-volatile memory
LU HAU-YAN1 citations52