Inventor
TSAI TZONG-LIANG
TW64 patents
⚠️ This page may combine multiple inventors who share the name “TSAI TZONG-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LEXTAR ELECTRONICS CORP
19 patentsUS9879178B2Jan 30, 2018
Fluoride phosphor, fabricating method thereof, and light-emitting apparatus and backlight module employing the same
LEXTAR ELECTRONICS CORP10 citations84
US10436973B2Oct 8, 2019
Quantum dot composite material and manufacturing method and application thereof
LEXTAR ELECTRONICS CORP8 citations80
US10020430B2Jul 10, 2018
Phosphor with preferred orientation, fabricating method thereof, and light-emitting element package structure employing the same
LEXTAR ELECTRONICS CORP12 citations80
US10497840B2Dec 3, 2019
Wavelength-converting film and light emitting device and display device using the same
LEXTAR ELECTRONICS CORP3 citations71
US10386629B2Aug 20, 2019
Light-enhancement device, and appliance having the same
LEXTAR ELECTRONICS CORP2 citations71
US10816716B2Oct 27, 2020
Application of quantum dot composite material
LEXTAR ELECTRONICS CORP2 citations69
US10808171B2Oct 20, 2020
Infrared emitting fluoride phosphor and infrared light emitting device
LEXTAR ELECTRONICS CORP2 citations69
US12463077B2Nov 4, 2025
Method of manufacturing display device
LEXTAR ELECTRONICS CORP0 citations62
US12431476B2Sep 30, 2025
Pixel package, method for forming the same, and display device using the same
LEXTAR ELECTRONICS CORP0 citations62
US10978622B2Apr 13, 2021
Nitride phosphor and light emitting device and backlight module employing the nitride phosphor
LEXTAR ELECTRONICS CORP0 citations62
US12087887B2Sep 10, 2024
Wavelength conversion material, method of manufacturing thereof and light emitting device
LEXTAR ELECTRONICS CORP0 citations61
US11294238B1Apr 5, 2022
Low blue light backlight module
LEXTAR ELECTRONICS CORP1 citations59
US11879084B2Jan 23, 2024
Phosphate phosphor, light emitting device, and detecting device
LEXTAR ELECTRONICS CORP0 citations58
US9093613B2Jul 28, 2015
Electrode structure and light emitting diode structure having the same
LEXTAR ELECTRONICS CORP0 citations52
US11469352B2Oct 11, 2022
Display device and manufacturing method thereof
LEXTAR ELECTRONICS CORP0 citations51
US11652193B2May 16, 2023
Light-emitting diode device
LEXTAR ELECTRONICS CORP0 citations50
US11302678B2Apr 12, 2022
Light-emitting package structure
LEXTAR ELECTRONICS CORP0 citations50
US10023794B2Jul 17, 2018
Fluoride phosphor including sheet-like crystal and manufacturing method and application thereof
LEXTAR ELECTRONICS CORP1 citations49
US11355675B2Jun 7, 2022
Wavelength converting material, and light emitting device
LEXTAR ELECTRONICS CORP0 citations48
HUGA OPTOTECH INC
10 patentsUS7804104B2Sep 28, 2010
Light-emitting diode with high lighting efficiency
HUGA OPTOTECH INC15 citations83
US7498607B2Mar 3, 2009
Epi-structure with uneven multi-quantum well and the method thereof
HUGA OPTOTECH INC7 citations73
US7659557B2Feb 9, 2010
Semiconductor light-emitting device and method of fabricating the same
HUGA OPTOTECH INC7 citations72
US7973326B2Jul 5, 2011
Semiconductor structure combination for epitaxy of semiconductor optoelectronic device
HUGA OPTOTECH INC3 citations62
US7915605B2Mar 29, 2011
LED packaged structure and applications of LED as light source
HUGA OPTOTECH INC2 citations62
US7999273B2Aug 16, 2011
Light emitting device having pillar structure with roughness surface and the forming method thereof
HUGA OPTOTECH INC2 citations60
US7768027B2Aug 3, 2010
Semiconductor light-emitting device
HUGA OPTOTECH INC2 citations59
US7745837B2Jun 29, 2010
Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same
HUGA OPTOTECH INC0 citations52
US9318676B2Apr 19, 2016
Light emitting device and methods for forming the same
HUGA OPTOTECH INC0 citations51
US7737453B2Jun 15, 2010
Light emitting diode structure
HUGA OPTOTECH INC0 citations51
UNITED EPITAXY CO LTD
8 patentsUS6441403B1Aug 27, 2002
Semiconductor device with roughened surface increasing external quantum efficiency
UNITED EPITAXY CO LTD164 citations99
US6781160B1Aug 24, 2004
Semiconductor light emitting device and method for manufacturing the same
UNITED EPITAXY CO LTD61 citations96
US6921924B2Jul 26, 2005
Semiconductor light-emitting device
UNITED EPITAXY CO LTD42 citations93
US6462357B1Oct 8, 2002
Epitaxial growth of nitride compound semiconductor
UNITED EPITAXY CO LTD21 citations93
US6429102B1Aug 6, 2002
Method of manufacturing low resistivity p-type compound semiconductor material
UNITED EPITAXY CO LTD11 citations74
US6399408B1Jun 4, 2002
Process for producing light emitting device
UNITED EPITAXY CO LTD6 citations72
US6894323B2May 17, 2005
Group III nitride semiconductor device and its method of manufacture
UNITED EPITAXY CO LTD2 citations63
US6544868B2Apr 8, 2003
Method of manufacturing light emitting diode with low-receptivity p-type impurity layers formed by microwave treatment
UNITED EPITAXY CO LTD1 citations52
EPISTAR CORP
6 patentsUS7067340B1Jun 27, 2006
Flip-chip light emitting diode and fabricating method thereof
EPISTAR CORP76 citations98
US7012281B2Mar 14, 2006
Light emitting diode device and manufacturing method
EPISTAR CORP35 citations92
US7355209B2Apr 8, 2008
Light emitting diode and method making the same
EPISTAR CORP19 citations91
US7498185B2Mar 3, 2009
Light emitting diode and method making the same
EPISTAR CORP3 citations61
US7768022B2Aug 3, 2010
Light emitting diode and fabricating method thereof
EPISTAR CORP4 citations60
US7652302B2Jan 26, 2010
Method of making light emitting diode
EPISTAR CORP2 citations60
TSAI TZONG-LIANG
2 patentsUNITED EPITAXY COMPANY
2 patentsCHENG CHIH CHING
1 patentTSAI CHIUNG-CHI
1 patentLIN SU-HUI
1 patentShowing the top 50 of 64 patents by PatentIndex Score.