P

Inventor

KUANG HSUN-CHUNG

TW93 patents
⚠️ This page may combine multiple inventors who share the name “KUANG HSUN-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

49 patents
US10529913B1Jan 7, 2020

Techniques for MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US10163651B1Dec 25, 2018

Structure and method to expose memory cells with different sizes

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US9425155B2Aug 23, 2016

Wafer bonding process and structure

TAIWAN SEMICONDUCTOR MFG CO LTD28 citations94
US10790189B2Sep 29, 2020

3D integrated circuit and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10665449B2May 26, 2020

Integrate rinse module in hybrid bonding platform

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9893120B2Feb 13, 2018

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9786628B2Oct 10, 2017

Air trench in packages incorporating hybrid bonding

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11081334B2Aug 3, 2021

Particle prevention in wafer edge trimming

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US12127483B2Oct 22, 2024

Doped sidewall spacer/etch stop layer for memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961545B2Apr 16, 2024

Circuit design and layout with high embedded memory density

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856801B2Dec 26, 2023

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11844226B2Dec 12, 2023

FeRAM with laminated ferroelectric film and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11545202B2Jan 3, 2023

Circuit design and layout with high embedded memory density

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11527713B2Dec 13, 2022

Top electrode via with low contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11430951B2Aug 30, 2022

Resistive memory cell with switching layer comprising one or more dopants

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404638B2Aug 2, 2022

Multi-doped data storage structure configured to improve resistive memory cell performance

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11183394B2Nov 23, 2021

Structure and method to expose memory cells with different sizes

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11183627B2Nov 23, 2021

MRAM MTJ top electrode connection

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11152426B2Oct 19, 2021

Memory device using an etch stop dielectric layer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10991758B2Apr 27, 2021

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10510563B2Dec 17, 2019

Wafer carrier assembly

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10350726B2Jul 16, 2019

Chemical mechanical polishing system and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10304903B2May 28, 2019

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10128209B2Nov 13, 2018

Wafer bonding process and structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10090196B2Oct 2, 2018

3D integrated circuit and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11887929B2Jan 30, 2024

Techniques to inhibit delamination from flowable gap-fill dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11495532B2Nov 8, 2022

Techniques to inhibit delamination from flowable gap-fill dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11049767B2Jun 29, 2021

Semiconductor device and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12132066B2Oct 29, 2024

Capping structure along image sensor element to mitigate damage to active layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11610927B2Mar 21, 2023

Capping structure along image sensor element to mitigate damage to active layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10857651B2Dec 8, 2020

Apparatus of chemical mechanical polishing and operating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11787012B2Oct 17, 2023

Conditioner disk, chemical mechanical polishing device, and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12424256B2Sep 23, 2025

Circuit design and layout with high embedded memory density

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12310036B2May 20, 2025

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12255062B2Mar 18, 2025

Integrate rinse module in hybrid bonding platform

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12232336B2Feb 18, 2025

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12075636B2Aug 27, 2024

Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854795B2Dec 26, 2023

Integrate rinse module in hybrid bonding platform

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11282697B2Mar 22, 2022

Integrate rinse module in hybrid bonding platform

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12568777B2Mar 3, 2026

Top electrode via with low contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471431B2Nov 11, 2025

Hard mask layer below via structure in display device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408448B2Sep 2, 2025

Deep trench isolation structure and methods for fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364171B2Jul 15, 2025

Resistive memory cell with switching layer comprising one or more dopants

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356631B2Jul 8, 2025

FeRAM with laminated ferroelectric film and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349366B2Jul 1, 2025

Interface film to mitigate size effect of memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302663B2May 13, 2025

Bond pad structure for bonding improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12295267B2May 6, 2025

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12290003B2Apr 29, 2025

Conductive structure connection with interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266604B2Apr 1, 2025

Techniques to inhibit delamination from flowable gap-fill dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

1 patent

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