Inventor

SHEN GUAN-JIE

TW35 patents

⚠️ This page may combine multiple inventors who share the name “SHEN GUAN-JIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEN GUAN-JIE

TAIWAN SEMICONDUCTOR MFG CO LTD

Gate feature in FinFET device

Epitaxy source/drain regions of FinFETs and method forming same

Gate feature in finFET device

Semiconductor device and method of manufacturing a semiconductor device

Source/drain structure for semiconductor device

Source/drain structure for semiconductor device

Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profile

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Epitaxy source/drain regions of FinFETs and method forming same

Semiconductor devices having parasitic channel structures

Semiconductor device and method of manufacturing a semiconductor device

Gate feature in FinFET device

Semiconductor device and method of manufacturing a semiconductor device

Method of fabricating trimmed fin and fin structure

Gate feature in FinFET device

Method of manufacturing semiconductor devices and semiconductor devices

Multigate device structure with engineered gate

Semiconductor devices with counter-doped nanostructures

Source/drain structure with enhanced dopant diffusion for semiconductor device

Semiconductor structure with embedded memory device

Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profile

Semiconductor devices including channel regions having non-uniform Ge concentration

Semiconductor structure with embedded memory device

Anti-punch-through doping on source/drain region

Method of manufacturing semiconductor devices and semiconductor devices

Semiconductor device and manufacturing method thereof

Buried gate structures for semiconductor devices

Method of fabricating a semiconductor device having a T-shape in the metal gate line-end

Method of fabricating a semiconductor device with reduced leak paths

Semiconductor device having a reversed T-shaped profile in the metal gate line-end

Semiconductor devices with modulated gate structures

Hybrid FinFET structure

TAIWAN SEMICONDUCTOR MFG

Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure

Method of fabricating a semiconductor device with reduced leak paths