Inventor
SEO DONG IL
KR55 patents
⚠️ This page may combine multiple inventors who share the name “SEO DONG IL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
34 patentsUS6381188B1Apr 30, 2002
DRAM capable of selectively performing self-refresh operation for memory bank
SAMSUNG ELECTRONICS CO LTD116 citations96
US7515487B2Apr 7, 2009
Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD31 citations93
US5812466ASep 22, 1998
Column redundancy circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations93
US5959936ASep 28, 1999
Column select line enable circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD26 citations92
US5768174AJun 16, 1998
Integrated circuit memory devices having metal straps to improve word line driver reliability
SAMSUNG ELECTRONICS CO LTD22 citations92
US5677886AOct 14, 1997
Sense amplifier circuit in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US5157278AOct 20, 1992
Substrate voltage generator for semiconductor device
SAMSUNG ELECTRONICS CO LTD30 citations92
US7528644B2May 5, 2009
Temperature detecting circuit
SAMSUNG ELECTRONICS CO LTD11 citations84
US7499359B2Mar 3, 2009
Temperature sensor instruction signal generator and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7365571B2Apr 29, 2008
Input buffer with wide input voltage range
SAMSUNG ELECTRONICS CO LTD16 citations84
US6798709B2Sep 28, 2004
Memory device having dual power ports and memory system including the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US6404693B1Jun 11, 2002
Integrated circuit memory devices that select sub-array blocks and input/output line pairs based on input/output bandwidth, and methods of controlling same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6055194AApr 25, 2000
Method and apparatus for controlling column select lines in a synchronous memory device
SAMSUNG ELECTRONICS CO LTD18 citations84
US6788596B2Sep 7, 2004
Failed cell address programming circuit and method for programming failed cell address
SAMSUNG ELECTRONICS CO LTD16 citations83
US5621679AApr 15, 1997
Semiconductor memory device for achieving high bandwidth and method for arranging signal lines therefor
SAMSUNG ELECTRONICS CO LTD16 citations81
US7486576B2Feb 3, 2009
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD6 citations74
US7260002B2Aug 21, 2007
Methods and devices for preventing data stored in memory from being read out
SAMSUNG ELECTRONICS CO LTD5 citations74
US7180808B2Feb 20, 2007
Semiconductor memory device for performing refresh operation
SAMSUNG ELECTRONICS CO LTD8 citations74
US6337823B1Jan 8, 2002
Random access memory device capable of minimizing sensing noise
SAMSUNG ELECTRONICS CO LTD12 citations74
US5777934AJul 7, 1998
Semiconductor memory device with variable plate voltage generator
SAMSUNG ELECTRONICS CO LTD8 citations74
US5677881AOct 14, 1997
Semiconductor memory device having a shortened test time and contol method therefor
SAMSUNG ELECTRONICS CO LTD12 citations74
US5579268ANov 26, 1996
Semiconductor memory device capable of driving word lines at high speed
SAMSUNG ELECTRONICS CO LTD7 citations74
US5537346AJul 16, 1996
Semiconductor memory device obtaining high bandwidth and signal line layout method thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US7657713B2Feb 2, 2010
Memory using packet controller and memory
SAMSUNG ELECTRONICS CO LTD7 citations72
US7706192B2Apr 27, 2010
Voltage generating circuits for semiconductor memory devices and methods for the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US5886933AMar 23, 1999
Boost voltage generator for controlling a memory cell array
SAMSUNG ELECTRONICS CO LTD2 citations63
US5796668AAug 18, 1998
Integrated circuit memory devices having reduced write cycle times and related methods
SAMSUNG ELECTRONICS CO LTD3 citations63
US5629894AMay 13, 1997
Memory module having read-modify-write function
SAMSUNG ELECTRONICS CO LTD5 citations63
US5550776AAug 27, 1996
Semiconductor memory device capable of driving word lines at high speed
SAMSUNG ELECTRONICS CO LTD2 citations63
US5374839ADec 20, 1994
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations63
US5783480AJul 21, 1998
Layout method for semiconductor memory device obtaining high bandwidth and signal line
SAMSUNG ELECTRONICS CO LTD4 citations62
US4868484ASep 19, 1989
Reference voltage generator using a charging and discharging circuit
SAMSUNG ELECTRONICS CO LTD5 citations59
US7408826B2Aug 5, 2008
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6490211B2Dec 3, 2002
Random access memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
KOREA ELECTRONICS TELECOMM
3 patentsUS8966609B2Feb 24, 2015
Authentication method and apparatus for detecting and preventing source address spoofing packets
KOREA ELECTRONICS TELECOMM222 citations99
US7797741B2Sep 14, 2010
System and method for coping with encrypted harmful traffic in hybrid IPv4/IPv6 networks
KOREA ELECTRONICS TELECOMM3 citations62
US7680062B2Mar 16, 2010
Apparatus and method for controlling abnormal traffic
KOREA ELECTRONICS TELECOMM1 citations52
MAGNACHIP SEMICONDUCTOR LTD
2 patentsUS11641199B2May 2, 2023
Slew rate adjusting circuit for adjusting slew rate, buffer circuit including same, and slew rate adjusting method
MAGNACHIP SEMICONDUCTOR LTD2 citations71
US11936372B2Mar 19, 2024
Slew rate adjusting circuit for adjusting slew rate, buffer circuit including same, and slew rate adjusting method
MAGNACHIP SEMICONDUCTOR LTD0 citations60
SAMSUNG DISPLAY CO LTD
2 patents(unassigned)
1 patentSAMSUNG ELECTRIC
1 patentELECTRONICS & TELECOMMUNICATIONS RES INST
1 patentMOON YONG HYUK
1 patentMOON YONG-HYUK
1 patentAN GAE-IL
1 patentMANDO CORP
1 patentLEE SANG CHEOL
1 patentCRUCIALTEC CO LTD
1 patentShowing the top 50 of 55 patents by PatentIndex Score.