P

Inventor

SEO DONG IL

KR55 patents
⚠️ This page may combine multiple inventors who share the name “SEO DONG IL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

34 patents
US6381188B1Apr 30, 2002

DRAM capable of selectively performing self-refresh operation for memory bank

SAMSUNG ELECTRONICS CO LTD116 citations96
US7515487B2Apr 7, 2009

Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD31 citations93
US5812466ASep 22, 1998

Column redundancy circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD37 citations93
US5959936ASep 28, 1999

Column select line enable circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD26 citations92
US5768174AJun 16, 1998

Integrated circuit memory devices having metal straps to improve word line driver reliability

SAMSUNG ELECTRONICS CO LTD22 citations92
US5677886AOct 14, 1997

Sense amplifier circuit in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD20 citations92
US5157278AOct 20, 1992

Substrate voltage generator for semiconductor device

SAMSUNG ELECTRONICS CO LTD30 citations92
US7528644B2May 5, 2009

Temperature detecting circuit

SAMSUNG ELECTRONICS CO LTD11 citations84
US7499359B2Mar 3, 2009

Temperature sensor instruction signal generator and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7365571B2Apr 29, 2008

Input buffer with wide input voltage range

SAMSUNG ELECTRONICS CO LTD16 citations84
US6798709B2Sep 28, 2004

Memory device having dual power ports and memory system including the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US6404693B1Jun 11, 2002

Integrated circuit memory devices that select sub-array blocks and input/output line pairs based on input/output bandwidth, and methods of controlling same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6055194AApr 25, 2000

Method and apparatus for controlling column select lines in a synchronous memory device

SAMSUNG ELECTRONICS CO LTD18 citations84
US6788596B2Sep 7, 2004

Failed cell address programming circuit and method for programming failed cell address

SAMSUNG ELECTRONICS CO LTD16 citations83
US5621679AApr 15, 1997

Semiconductor memory device for achieving high bandwidth and method for arranging signal lines therefor

SAMSUNG ELECTRONICS CO LTD16 citations81
US7486576B2Feb 3, 2009

Methods and devices for preventing data stored in memory from being read out

SAMSUNG ELECTRONICS CO LTD6 citations74
US7260002B2Aug 21, 2007

Methods and devices for preventing data stored in memory from being read out

SAMSUNG ELECTRONICS CO LTD5 citations74
US7180808B2Feb 20, 2007

Semiconductor memory device for performing refresh operation

SAMSUNG ELECTRONICS CO LTD8 citations74
US6337823B1Jan 8, 2002

Random access memory device capable of minimizing sensing noise

SAMSUNG ELECTRONICS CO LTD12 citations74
US5777934AJul 7, 1998

Semiconductor memory device with variable plate voltage generator

SAMSUNG ELECTRONICS CO LTD8 citations74
US5677881AOct 14, 1997

Semiconductor memory device having a shortened test time and contol method therefor

SAMSUNG ELECTRONICS CO LTD12 citations74
US5579268ANov 26, 1996

Semiconductor memory device capable of driving word lines at high speed

SAMSUNG ELECTRONICS CO LTD7 citations74
US5537346AJul 16, 1996

Semiconductor memory device obtaining high bandwidth and signal line layout method thereof

SAMSUNG ELECTRONICS CO LTD6 citations73
US7657713B2Feb 2, 2010

Memory using packet controller and memory

SAMSUNG ELECTRONICS CO LTD7 citations72
US7706192B2Apr 27, 2010

Voltage generating circuits for semiconductor memory devices and methods for the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US5886933AMar 23, 1999

Boost voltage generator for controlling a memory cell array

SAMSUNG ELECTRONICS CO LTD2 citations63
US5796668AAug 18, 1998

Integrated circuit memory devices having reduced write cycle times and related methods

SAMSUNG ELECTRONICS CO LTD3 citations63
US5629894AMay 13, 1997

Memory module having read-modify-write function

SAMSUNG ELECTRONICS CO LTD5 citations63
US5550776AAug 27, 1996

Semiconductor memory device capable of driving word lines at high speed

SAMSUNG ELECTRONICS CO LTD2 citations63
US5374839ADec 20, 1994

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US5783480AJul 21, 1998

Layout method for semiconductor memory device obtaining high bandwidth and signal line

SAMSUNG ELECTRONICS CO LTD4 citations62
US4868484ASep 19, 1989

Reference voltage generator using a charging and discharging circuit

SAMSUNG ELECTRONICS CO LTD5 citations59
US7408826B2Aug 5, 2008

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US6490211B2Dec 3, 2002

Random access memory device

SAMSUNG ELECTRONICS CO LTD0 citations52

KOREA ELECTRONICS TELECOMM

3 patents

MAGNACHIP SEMICONDUCTOR LTD

2 patents

SAMSUNG DISPLAY CO LTD

2 patents

(unassigned)

1 patent

SAMSUNG ELECTRIC

1 patent

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent

MOON YONG HYUK

1 patent

MOON YONG-HYUK

1 patent

AN GAE-IL

1 patent

MANDO CORP

1 patent

LEE SANG CHEOL

1 patent

CRUCIALTEC CO LTD

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.