Inventor
BAECK SANG-YEOP
KR18 patents
Patents
18 patentsUS10424577B2Sep 24, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations82
US8947951B2Feb 3, 2015
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD17 citations82
US9627037B2Apr 18, 2017
Semiconductor memory device with a power gating circuit for reducing an instantaneous voltage drop
SAMSUNG ELECTRONICS CO LTD5 citations73
US10885954B2Jan 5, 2021
Memory devices comprising a write assist circuit
SAMSUNG ELECTRONICS CO LTD2 citations72
US10580733B2Mar 3, 2020
Integrated circuit having heterogeneous source/drain and gate contacts
SAMSUNG ELECTRONICS CO LTD5 citations72
US11875844B2Jan 16, 2024
Static random access memory device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11581038B2Feb 14, 2023
Semiconductor device for selectively performing isolation function and layout displacement method thereof
SAMSUNG ELECTRONICS CO LTD2 citations71
US8884687B2Nov 11, 2014
Power gating circuit
SAMSUNG ELECTRONICS CO LTD4 citations71
US11437315B2Sep 6, 2022
Integrated circuit having heterogeneous gate contacts over active regions
SAMSUNG ELECTRONICS CO LTD1 citations61
US11127730B2Sep 21, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US10672442B2Jun 2, 2020
Voltage control circuit including assist circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10431272B2Oct 1, 2019
Voltage control circuit including assist circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11183233B2Nov 23, 2021
Semiconductor device for selectively performing isolation function and layout displacement method thereof
SAMSUNG ELECTRONICS CO LTD0 citations60
US9886997B2Feb 6, 2018
Semiconductor device for reducing an instantaneous voltage drop
SAMSUNG ELECTRONICS CO LTD1 citations52
US11854610B2Dec 26, 2023
Semiconductor device for selectively performing isolation function and layout displacement method thereof
SAMSUNG ELECTRONICS CO LTD0 citations50
US10453521B2Oct 22, 2019
Layout of semiconductor device for selectively operating as insulating circuit or driving circuit
SAMSUNG ELECTRONICS CO LTD0 citations50
US12477751B2Nov 18, 2025
SRAM device and 3D semiconductor integrated circuit thereof
SAMSUNG ELECTRONICS CO LTD0 citations48
US10847208B2Nov 24, 2020
Memory device system-on-chip including the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations39