Inventor
YOSHIDA SOUICHI
JP16 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIDA SOUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
12 patentsUS9023692B2May 5, 2015
Semiconductor device and semiconductor device manufacturing method
FUJI ELECTRIC CO LTD11 citations83
US10381225B2Aug 13, 2019
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
FUJI ELECTRIC CO LTD10 citations82
US9536875B2Jan 3, 2017
Semiconductor device
FUJI ELECTRIC CO LTD9 citations82
US10658360B2May 19, 2020
Semiconductor device with an insulated-gate bipolar transistor region and a diode region
FUJI ELECTRIC CO LTD2 citations72
US9614106B2Apr 4, 2017
Semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US10128345B2Nov 13, 2018
Semiconductor device
FUJI ELECTRIC CO LTD2 citations70
US11869961B2Jan 9, 2024
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11264490B2Mar 1, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US10629678B2Apr 21, 2020
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US11508581B2Nov 22, 2022
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
FUJI ELECTRIC CO LTD0 citations61
US10840099B2Nov 17, 2020
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
FUJI ELECTRIC CO LTD0 citations51
US9911733B2Mar 6, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41