Inventor
HERSEE STEPHEN D
US33 patents
⚠️ This page may combine multiple inventors who share the name “HERSEE STEPHEN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HERSEE STEPHEN D
10 patentsUS8624968B1Jan 7, 2014
Lens-less digital microscope
HERSEE STEPHEN D90 citations96
US9275857B1Mar 1, 2016
Nanowires, nanowire networks and methods for their formation and use
HERSEE STEPHEN D26 citations94
US9106056B1Aug 11, 2015
Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices
HERSEE STEPHEN D37 citations94
US8964020B2Feb 24, 2015
Solid-state microscope for selectively imaging a sample
HERSEE STEPHEN D16 citations92
US8455856B1Jun 4, 2013
Integration of LED driver circuit with LED
HERSEE STEPHEN D16 citations92
US8410496B2Apr 2, 2013
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
HERSEE STEPHEN D20 citations92
US8338818B1Dec 25, 2012
Nanowires, nanowire networks and methods for their formation and use
HERSEE STEPHEN D7 citations84
US8188513B2May 29, 2012
Nanowire and larger GaN based HEMTS
HERSEE STEPHEN D8 citations84
US9696531B2Jul 4, 2017
Solid-state microscope for selectively imaging a sample
HERSEE STEPHEN D2 citations73
US8866125B2Oct 21, 2014
Integration of LED driver circuit with LED
HERSEE STEPHEN D0 citations52
STC UNM
9 patentsUS7521274B2Apr 21, 2009
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
STC UNM104 citations98
US6596377B1Jul 22, 2003
Thin film product and method of forming
STC UNM98 citations97
US9142400B1Sep 22, 2015
Method of making a heteroepitaxial layer on a seed area
STC UNM15 citations92
US8039854B2Oct 18, 2011
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
STC UNM27 citations92
US8658519B1Feb 25, 2014
Nanowires, nanowire networks and methods for their formation and use
STC UNM6 citations84
US7968359B2Jun 28, 2011
Thin-walled structures
STC UNM12 citations84
US8716045B2May 6, 2014
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
STC UNM5 citations83
US8343823B2Jan 1, 2013
Nanowire and larger GaN based HEMTs
STC UNM2 citations63
US7666696B2Feb 23, 2010
Process for controlling indium clustering in ingan leds using strain arrays
STC UNM6 citations63
UNM RAINFOREST INNOVATIONS
6 patentsUS11342442B2May 24, 2022
Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal
UNM RAINFOREST INNOVATIONS4 citations84
US11374106B2Jun 28, 2022
Method of making heteroepitaxial structures and device formed by the method
UNM RAINFOREST INNOVATIONS2 citations73
US11456370B2Sep 27, 2022
Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal
UNM RAINFOREST INNOVATIONS0 citations62
US11349011B2May 31, 2022
Method of making heteroepitaxial structures and device formed by the method
UNM RAINFOREST INNOVATIONS0 citations62
US11342438B1May 24, 2022
Device with heteroepitaxial structure made using a growth mask
UNM RAINFOREST INNOVATIONS0 citations62
US11342441B2May 24, 2022
Method of forming a seed area and growing a heteroepitaxial layer on the seed area
UNM RAINFOREST INNOVATIONS0 citations62