Inventor
KO JOE
TW41 patents
⚠️ This page may combine multiple inventors who share the name “KO JOE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
35 patentsUS5576557ANov 19, 1996
Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits
UNITED MICROELECTRONICS CORP154 citations98
US5350710ASep 27, 1994
Device for preventing antenna effect on circuit
UNITED MICROELECTRONICS CORP118 citations98
US5393701AFeb 28, 1995
Layout design to eliminate process antenna effect
UNITED MICROELECTRONICS CORP129 citations97
US5821629AOct 13, 1998
Buried structure SRAM cell and methods for fabrication
UNITED MICROELECTRONICS CORP78 citations96
US5559352ASep 24, 1996
ESD protection improvement
UNITED MICROELECTRONICS CORP70 citations96
US5473169ADec 5, 1995
Complementary-SCR electrostatic discharge protection circuit
UNITED MICROELECTRONICS CORP78 citations96
US6271082B1Aug 7, 2001
Method of fabricating a mixed circuit capacitor
UNITED MICROELECTRONICS CORP74 citations94
US5686321ANov 11, 1997
Local punchthrough stop for ultra large scale integration devices
UNITED MICROELECTRONICS CORP22 citations93
US5574302ANov 12, 1996
Field effect transistor structure of a diving channel device
UNITED MICROELECTRONICS CORP19 citations93
US5565369AOct 15, 1996
Method of making retarded DDD (double diffused drain) device structure
UNITED MICROELECTRONICS CORP21 citations93
US5518941AMay 21, 1996
Maskless method for formation of a field implant channel stop region
UNITED MICROELECTRONICS CORP27 citations93
US5484743AJan 16, 1996
Self-aligned anti-punchthrough implantation process
UNITED MICROELECTRONICS CORP21 citations93
US5460987AOct 24, 1995
Method of making field effect transistor structure of a diving channel device
UNITED MICROELECTRONICS CORP29 citations93
US5434108AJul 18, 1995
Grounding method to eliminate the antenna effect in VLSI process
UNITED MICROELECTRONICS CORP21 citations93
US5393693AFeb 28, 1995
"Bird-beak-less" field isolation method
UNITED MICROELECTRONICS CORP45 citations93
US5374565ADec 20, 1994
Method for ESD protection improvement
UNITED MICROELECTRONICS CORP40 citations93
US5308780AMay 3, 1994
Surface counter-doped N-LDD for high hot carrier reliability
UNITED MICROELECTRONICS CORP52 citations93
US5956590ASep 21, 1999
Process of forming a field effect transistor without spacer mask edge defects
UNITED MICROELECTRONICS CORP42 citations92
US6207535B1Mar 27, 2001
Method of forming shallow trench isolation
UNITED MICROELECTRONICS CORP35 citations91
US5514623AMay 7, 1996
Method of making layout design to eliminate process antenna effect
UNITED MICROELECTRONICS CORP20 citations91
US5565700AOct 15, 1996
Surface counter doped N-LDD for high carrier reliability
UNITED MICROELECTRONICS CORP34 citations89
US5140401AAug 18, 1992
CMOS ESD protection circuit with parasitic SCR structures
UNITED MICROELECTRONICS CORP57 citations89
US6350677B1Feb 26, 2002
Method for forming a self-aligned silicide layer
UNITED MICROELECTRONICS CORP10 citations74
US6159803ADec 12, 2000
Method of fabricating flash memory
UNITED MICROELECTRONICS CORP11 citations74
US5817577AOct 6, 1998
Grounding method for eliminating process antenna effect
UNITED MICROELECTRONICS CORP16 citations74
US5716874AFeb 10, 1998
Method of fabricating EPROM memory by individually forming gate oxide and coupling insulator
UNITED MICROELECTRONICS CORP10 citations74
US5654569AAug 5, 1997
Retarded double diffused drain device structure
UNITED MICROELECTRONICS CORP9 citations74
US5602049AFeb 11, 1997
Method of fabricating a buried structure SRAM cell
UNITED MICROELECTRONICS CORP12 citations74
US5646062AJul 8, 1997
Method for ESD protection circuit with deep source diffusion
UNITED MICROELECTRONICS CORP8 citations72
US6309925B1Oct 30, 2001
Method for manufacturing capacitor
UNITED MICROELECTRONICS CORP7 citations71
US6303455B1Oct 16, 2001
Method for manufacturing capacitor
UNITED MICROELECTRONICS CORP13 citations71
US6225219B1May 1, 2001
Method of stabilizing anti-reflection coating layer
UNITED MICROELECTRONICS CORP7 citations71
US6046079AApr 4, 2000
Method for prevention of latch-up of CMOS devices
UNITED MICROELECTRONICS CORP5 citations63
US6221761B1Apr 24, 2001
Method of stabilizing anti-reflection coating layer
UNITED MICROELECTRONICS CORP2 citations60
US6555893B1Apr 29, 2003
Bar circuit for an integrated circuit
UNITED MICROELECTRONICS CORP4 citations54
UNITED SEMICONDUCTOR CORP
6 patentsUS6194271B1Feb 27, 2001
Method for fabricating flash memory
UNITED SEMICONDUCTOR CORP7 citations74
US5899718AMay 4, 1999
Method for fabricating flash memory cells
UNITED SEMICONDUCTOR CORP13 citations74
US6180471B1Jan 30, 2001
Method of fabricating high voltage semiconductor device
UNITED SEMICONDUCTOR CORP2 citations63
US6046938AApr 4, 2000
Structure of a flash memory
UNITED SEMICONDUCTOR CORP5 citations63
US5960288ASep 28, 1999
Method of fabricating electrostatic discharge protection device
UNITED SEMICONDUCTOR CORP6 citations63
US5976935ANov 2, 1999
Method of fabricating an electrically erasable and programmable read-only memory (EEPROM) with improved quality for the tunneling oxide layer therein
UNITED SEMICONDUCTOR CORP3 citations57