P

Inventor

SATO HIROTOSHI

JP50 patents
⚠️ This page may combine multiple inventors who share the name “SATO HIROTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

22 patents
US5966319AOct 12, 1999

Static memory device allowing correct data reading

MITSUBISHI ELECTRIC CORP56 citations96
US6388857B1May 14, 2002

Semiconductor circuit device with improved surge resistance

MITSUBISHI ELECTRIC CORP18 citations93
US6294404B1Sep 25, 2001

Semiconductor integrated circuit having function of reducing a power consumption and semiconductor integrated circuit system comprising this semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP25 citations93
US6118154ASep 12, 2000

Input/output protection circuit having an SOI structure

MITSUBISHI ELECTRIC CORP33 citations93
US5864511AJan 26, 1999

Semiconductor memory device using cross-coupled load and precharge circuit for bit line pairs

MITSUBISHI ELECTRIC CORP37 citations93
US5754480AMay 19, 1998

Semiconductor device including an output buffer circuit that can output data while establishing impedance matching with an external data transmission line

MITSUBISHI ELECTRIC CORP47 citations93
US5602798AFeb 11, 1997

Synchronous semiconductor memory device operable in a snooze mode

MITSUBISHI ELECTRIC CORP28 citations93
US5946251AAug 31, 1999

Bit line equalize circuit of semiconductor memory device

MITSUBISHI ELECTRIC CORP29 citations92
US5841961ANov 24, 1998

Semiconductor memory device including a tag memory

MITSUBISHI ELECTRIC CORP26 citations92
US5708599AJan 13, 1998

Semiconductor memory device capable of reducing power consumption

MITSUBISHI ELECTRIC CORP26 citations92
US5317213AMay 31, 1994

Level converter with delay circuitry used to increase switching speed

MITSUBISHI ELECTRIC CORP21 citations92
US6577553B2Jun 10, 2003

Semiconductor memory device

MITSUBISHI ELECTRIC CORP14 citations84
US6556485B2Apr 29, 2003

Output buffer capable of adjusting current drivability and semiconductor integrated circuit device having the same

MITSUBISHI ELECTRIC CORP11 citations74
US6301678B1Oct 9, 2001

Test circuit for reducing test time in semiconductor memory device having multiple data input/output terminals

MITSUBISHI ELECTRIC CORP11 citations74
US5793670AAug 11, 1998

Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistors and method of manufacturing bipolar transistors

MITSUBISHI ELECTRIC CORP7 citations74
US5734280AMar 31, 1998

Semiconductor integrated circuit device having power on reset circuit

MITSUBISHI ELECTRIC CORP16 citations74
US5546352AAug 13, 1996

Semiconductor memory device having decoder

MITSUBISHI ELECTRIC CORP9 citations74
US6707735B2Mar 16, 2004

Semiconductor memory device

MITSUBISHI ELECTRIC CORP9 citations73
US6584013B2Jun 24, 2003

Semiconductor memory device having increased memory capacity while reducing mounting area and stand-by current

MITSUBISHI ELECTRIC CORP9 citations73
US5764565AJun 9, 1998

Static type semiconductor memory device with two word lines for one row

MITSUBISHI ELECTRIC CORP14 citations73
US6493279B2Dec 10, 2002

Semiconductor device capable of simple measurement of oscillation frequency

MITSUBISHI ELECTRIC CORP3 citations63
US5963470AOct 5, 1999

Static semiconductor memory cell with improved data retention stability

MITSUBISHI ELECTRIC CORP6 citations63

RENESAS TECH CORP

11 patents

HITACHI INDUSTRY EQUIPMENT SYSTEMS CO LTD

10 patents

RENESAS ELECTRONICS CORP

2 patents

GUNZE KK

1 patent

HITACHI IND EQUIPMENT SYS

1 patent

YAMAZAKI MAZAK CORP

1 patent

AGARI TAKESHI

1 patent

TOKUNAGA TAICHI

1 patent