P

Inventor

KANG CHANG-SEOK

KR84 patents
⚠️ This page may combine multiple inventors who share the name “KANG CHANG-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US5834357ANov 10, 1998

Fabricating method of making a fin shaped capacitor

SAMSUNG ELECTRONICS CO LTD104 citations98
US9716104B2Jul 25, 2017

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD39 citations97
US5786259AJul 28, 1998

Methods of forming integrated circuit capacitors including etch stopping layers

SAMSUNG ELECTRONICS CO LTD80 citations96
US5552337ASep 3, 1996

Method for manfacturing a capacitor for a semiconductor memory device having a tautalum oxide film

SAMSUNG ELECTRONICS CO LTD58 citations96
US6211005B1Apr 3, 2001

Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereof

SAMSUNG ELECTRONICS CO LTD23 citations93
US6127218AOct 3, 2000

Methods for forming ferroelectric films using dual deposition steps

SAMSUNG ELECTRONICS CO LTD33 citations93
US6078493AJun 20, 2000

Fin-shaped capacitor

SAMSUNG ELECTRONICS CO LTD38 citations93
US5955774ASep 21, 1999

Integrated circuit ferroelectric memory devices including resistors in periphery region

SAMSUNG ELECTRONICS CO LTD35 citations93
US5834348ANov 10, 1998

Method for manufacturing a semiconductor device having a ferroelectric capacitor

SAMSUNG ELECTRONICS CO LTD25 citations92
US5796133AAug 18, 1998

Semiconductor device capacitor having lower electrodes separated by low dielectric spacer material

SAMSUNG ELECTRONICS CO LTD33 citations92
US7867883B2Jan 11, 2011

Methods of fabricating non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US7776687B2Aug 17, 2010

Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7732856B2Jun 8, 2010

Charge-trap type non-volatile memory devices and related methods

SAMSUNG ELECTRONICS CO LTD10 citations84
US7399672B2Jul 15, 2008

Methods of forming nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD19 citations84
US10153292B2Dec 11, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD12 citations83
US9905568B2Feb 27, 2018

Nonvolatile memory device and a method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US7605430B2Oct 20, 2009

Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US7547942B2Jun 16, 2009

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6806183B2Oct 19, 2004

Methods for forming capacitors on semiconductor substrates

SAMSUNG ELECTRONICS CO LTD10 citations74
US6180482B1Jan 30, 2001

Method for manufacturing high dielectric capacitor

SAMSUNG ELECTRONICS CO LTD10 citations74
US10896728B2Jan 19, 2021

Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocks

SAMSUNG ELECTRONICS CO LTD5 citations73
US10763167B2Sep 1, 2020

Vertical semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10199389B2Feb 5, 2019

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9646984B2May 9, 2017

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD5 citations73
US10629609B2Apr 21, 2020

Three dimensional semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US9972636B2May 15, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD4 citations72
US10658374B2May 19, 2020

Vertical semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations70
US10297543B2May 21, 2019

Vertical semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations70
US10672789B2Jun 2, 2020

Methods of manufacturing vertical semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations68
US7863686B2Jan 4, 2011

Nonvolatile memory devices having a fin shaped active region

SAMSUNG ELECTRONICS CO LTD2 citations63
US7829929B2Nov 9, 2010

Non-volatile memory device and non-volatile semiconductor integrated circuit device, including the same

SAMSUNG ELECTRONICS CO LTD3 citations63

APPLIED MATERIALS INC

7 patents

HYNIX SEMICONDUCTOR INC

6 patents

CHOE BYEONG-IN

2 patents

KIM JU-HYUNG

2 patents

JUNG WON-SEOK

1 patent

KIM JU HYUNG

1 patent

Showing the top 50 of 84 patents by PatentIndex Score.