Inventor
DALLABORA MARCO
IT45 patents
⚠️ This page may combine multiple inventors who share the name “DALLABORA MARCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS10083751B1Sep 25, 2018
Data state synchronization
MICRON TECHNOLOGY INC8 citations84
US10977198B2Apr 13, 2021
Hybrid memory system interface
MICRON TECHNOLOGY INC3 citations73
US10809942B2Oct 20, 2020
Latency-based storage in a hybrid memory system
MICRON TECHNOLOGY INC3 citations73
US10705747B2Jul 7, 2020
Latency-based storage in a hybrid memory system
MICRON TECHNOLOGY INC2 citations73
US10705963B2Jul 7, 2020
Latency-based storage in a hybrid memory system
MICRON TECHNOLOGY INC2 citations73
US10649665B2May 12, 2020
Data relocation in hybrid memory
MICRON TECHNOLOGY INC3 citations73
US10430085B2Oct 1, 2019
Memory operations on data
MICRON TECHNOLOGY INC3 citations73
US10261876B2Apr 16, 2019
Memory management
MICRON TECHNOLOGY INC3 citations73
US10157650B1Dec 18, 2018
Program operations in memory
MICRON TECHNOLOGY INC2 citations73
US11886710B2Jan 30, 2024
Memory operations on data
MICRON TECHNOLOGY INC0 citations63
US11835992B2Dec 5, 2023
Hybrid memory system interface
MICRON TECHNOLOGY INC0 citations63
US11550678B2Jan 10, 2023
Memory management
MICRON TECHNOLOGY INC0 citations63
US11488681B2Nov 1, 2022
Data state synchronization
MICRON TECHNOLOGY INC0 citations63
US11456033B2Sep 27, 2022
Dedicated commands for memory operations
MICRON TECHNOLOGY INC0 citations63
US11209986B2Dec 28, 2021
Memory operations on data
MICRON TECHNOLOGY INC0 citations63
US10956290B2Mar 23, 2021
Memory management
MICRON TECHNOLOGY INC0 citations63
US10943659B2Mar 9, 2021
Data state synchronization
MICRON TECHNOLOGY INC0 citations63
US10916324B2Feb 9, 2021
Data state synchronization involving memory cells having an inverted data state written thereto
MICRON TECHNOLOGY INC1 citations63
US11340808B2May 24, 2022
Latency-based storage in a hybrid memory system
MICRON TECHNOLOGY INC1 citations62
US11327892B2May 10, 2022
Latency-based storage in a hybrid memory system
MICRON TECHNOLOGY INC1 citations62
US10622065B2Apr 14, 2020
Dedicated commands for memory operations
MICRON TECHNOLOGY INC0 citations52
US10600456B2Mar 24, 2020
Program operations in memory
MICRON TECHNOLOGY INC0 citations52
US10573383B2Feb 25, 2020
Data state synchronization
MICRON TECHNOLOGY INC0 citations52
ST MICROELECTRONICS SRL
12 patentsUS5917753AJun 29, 1999
Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
ST MICROELECTRONICS SRL48 citations96
US6483750B2Nov 19, 2002
Flash EEPROM with on-chip erase source voltage generator
ST MICROELECTRONICS SRL20 citations92
US6055187AApr 25, 2000
Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
ST MICROELECTRONICS SRL44 citations92
US5999450ADec 7, 1999
Electrically erasable and programmable non-volatile memory device with testable redundancy circuits
ST MICROELECTRONICS SRL44 citations92
US5638327AJun 10, 1997
Flash-EEPROM memory array and method for biasing the same
ST MICROELECTRONICS SRL49 citations92
US5633822AMay 27, 1997
Method of programming a nonvolatile flash-EEPROM memory array using source line switching transistors
ST MICROELECTRONICS SRL34 citations92
US5179300AJan 12, 1993
Data output stage having feedback loops to precharge the output node
ST MICROELECTRONICS SRL25 citations90
US6195290B1Feb 27, 2001
Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage device
ST MICROELECTRONICS SRL16 citations84
US5587946ADec 24, 1996
Method of reading, erasing and programming a nonvolatile flash-EEPROM memory arrray using source line switching transistors
ST MICROELECTRONICS SRL17 citations82
US5541880AJul 30, 1996
Reference signal generating method and circuit for differential evaluation of the content of nonvolatile memory cells
ST MICROELECTRONICS SRL12 citations74
US5508956AApr 16, 1996
Nonvolatile flash-EEPROM memory array with source control transistors
ST MICROELECTRONICS SRL12 citations74
US6195291B1Feb 27, 2001
Flash EEPROM with on-chip erase source voltage generator
ST MICROELECTRONICS SRL13 citations73
SGS THOMSON MICROELECTRONICS
10 patentsUS5784314AJul 21, 1998
Method for setting the threshold voltage of a reference memory cell
SGS THOMSON MICROELECTRONICS94 citations97
US5717636AFeb 10, 1998
EEPROM memory with contactless memory cells
SGS THOMSON MICROELECTRONICS85 citations96
US5754476AMay 19, 1998
Negative charge pump circuit for electrically erasable semiconductor memory devices
SGS THOMSON MICROELECTRONICS70 citations95
US5258959ANov 2, 1993
Memory cell reading circuit
SGS THOMSON MICROELECTRONICS25 citations93
US5784319AJul 21, 1998
Method for erasing an electrically programmable and erasable non-volatile memory cell
SGS THOMSON MICROELECTRONICS30 citations92
US4888497ADec 19, 1989
Generator of reset pulses upon the rise of the power supply for CMOS-type integrated circuits
SGS THOMSON MICROELECTRONICS46 citations92
US5267202ANov 30, 1993
Reading device for EPROM memory cells with the operational field independent of the threshold jump of the written cells with respect to the virgin cells
SGS THOMSON MICROELECTRONICS25 citations90
US5721707AFeb 24, 1998
Erase voltage control circuit for an electrically erasable non-volatile memory cell
SGS THOMSON MICROELECTRONICS17 citations83
US5926059AJul 20, 1999
Stacked Charge pump circuit
SGS THOMSON MICROELECTRONICS20 citations81
US5854764ADec 29, 1998
Sectorized electrically erasable and programmable non-volatile memory device with redundancy
SGS THOMSON MICROELECTRONICS7 citations73