Inventor
CHIEN TUO-HSIN
TW20 patents
⚠️ This page may combine multiple inventors who share the name “CHIEN TUO-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SYSTEM GENERAL CORP
14 patentsUS6903421B1Jun 7, 2005
Isolated high-voltage LDMOS transistor having a split well structure
SYSTEM GENERAL CORP69 citations98
US6995428B2Feb 7, 2006
High voltage LDMOS transistor having an isolated structure
SYSTEM GENERAL CORP36 citations92
US6873011B1Mar 29, 2005
High voltage and low on-resistance LDMOS transistor having equalized capacitance
SYSTEM GENERAL CORP41 citations92
US7042028B1May 9, 2006
Electrostatic discharge device
SYSTEM GENERAL CORP14 citations84
US7205201B2Apr 17, 2007
CMOS compatible process with different-voltage devices
SYSTEM GENERAL CORP9 citations74
US7102194B2Sep 5, 2006
High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effect
SYSTEM GENERAL CORP7 citations74
US7858466B2Dec 28, 2010
Different-voltage device manufactured by a CMOS compatible process and high-voltage device used in the different-voltage device
SYSTEM GENERAL CORP3 citations63
US7417287B2Aug 26, 2008
Electrostatic discharge device having controllable trigger voltage
SYSTEM GENERAL CORP2 citations63
US7355250B2Apr 8, 2008
Electrostatic discharge device with controllable holding current
SYSTEM GENERAL CORP2 citations63
US7285837B2Oct 23, 2007
Electrostatic discharge device integrated with pad
SYSTEM GENERAL CORP5 citations63
US7615826B2Nov 10, 2009
Electrostatic discharge protection semiconductor structure
SYSTEM GENERAL CORP1 citations52
US7169661B2Jan 30, 2007
Process of fabricating high resistance CMOS resistor
SYSTEM GENERAL CORP1 citations52
US7923787B2Apr 12, 2011
MOSFET with isolation structure and fabrication method thereof
SYSTEM GENERAL CORP0 citations39
US7847365B2Dec 7, 2010
MOSFET with isolation structure for monolithic integration and fabrication method thereof
SYSTEM GENERAL CORP0 citations39
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS11063157B1Jul 13, 2021
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11769792B2Sep 26, 2023
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12176387B2Dec 24, 2024
Trench capacitor profile to decrease substrate warpage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62