Inventor

PARSEY JR JOHN M

US8 patents

⚠️ This page may combine multiple inventors who share the name “PARSEY JR JOHN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEMICONDUCTOR COMPONENTS IND

4 patents

US7482220B2Jan 27, 2009

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND37 citations96

US7902601B2Mar 8, 2011

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND13 citations92

US7799640B2Sep 21, 2010

Method of forming a semiconductor device having trench charge compensation regions

SEMICONDUCTOR COMPONENTS IND9 citations82

USRE45365EFeb 10, 2015

Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate

SEMICONDUCTOR COMPONENTS IND2 citations62

GRIVNA GORDON M

2 patents

US8859396B2Oct 14, 2014

Semiconductor die singulation method

GRIVNA GORDON M12 citations83

US9012304B2Apr 21, 2015

Semiconductor die singulation method

GRIVNA GORDON M0 citations51

MOTOROLA INC

1 patent

US6140703AOct 31, 2000

Semiconductor metallization structure

MOTOROLA INC33 citations87

SEMICONDUCTOR COMPONENTS IND LLC

1 patent

US10340160B2Jul 2, 2019

Method of forming a semiconductor die cutting tool

SEMICONDUCTOR COMPONENTS IND LLC1 citations72