P

Inventor

FAREED QHALID

US27 patents
⚠️ This page may combine multiple inventors who share the name “FAREED QHALID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

8 patents
US9337023B1May 10, 2016

Buffer stack for group IIIA-N devices

TEXAS INSTRUMENTS INC9 citations82
US10529561B2Jan 7, 2020

Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices

TEXAS INSTRUMENTS INC2 citations71
US12520547B2Jan 6, 2026

Monolithic integration of high and low-side GaN FETS with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US11888027B2Jan 30, 2024

Monolithic integration of high and low-side GaN FETs with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US11011515B2May 18, 2021

Normally off III nitride transistor

TEXAS INSTRUMENTS INC1 citations62
US9847223B2Dec 19, 2017

Buffer stack for group IIIA-N devices

TEXAS INSTRUMENTS INC0 citations51
US9590086B2Mar 7, 2017

Buffer stack for group IIIA-N devices

TEXAS INSTRUMENTS INC0 citations51
US12170328B2Dec 17, 2024

P type gallium nitride conformal epitaxial structure over thick buffer layer

TEXAS INSTRUMENTS INC0 citations49

KHAN ASIF

6 patents
US8507941B2Aug 13, 2013

Ultraviolet light emitting diode with AC voltage operation

KHAN ASIF9 citations83
US8563995B2Oct 22, 2013

Ultraviolet light emitting diode/laser diode with nested superlattice

KHAN ASIF6 citations73
US8222669B2Jul 17, 2012

Mixed source growth apparatus and method of fabricating III-nitride ultraviolet emitters

KHAN ASIF6 citations73
US8415654B2Apr 9, 2013

Low resistance ultraviolet light emitting device and method of fabricating the same

KHAN ASIF3 citations62
US9343563B2May 17, 2016

Selectively area regrown III-nitride high electron mobility transistor

KHAN ASIF1 citations51
US8796097B2Aug 5, 2014

Selectively area regrown III-nitride high electron mobility transistor

KHAN ASIF0 citations51

SENSOR ELECTRONIC TECH INC

3 patents
US7429534B2Sep 30, 2008

Etching a nitride-based heterostructure

SENSOR ELECTRONIC TECH INC29 citations92
US7192849B2Mar 20, 2007

Methods of growing nitride-based film using varying pulses

SENSOR ELECTRONIC TECH INC19 citations92
US6841809B2Jan 11, 2005

Heterostructure semiconductor device

SENSOR ELECTRONIC TECH INC11 citations74

KHAN M ASIF

2 patents
US9331240B2May 3, 2016

Utlraviolet light emitting devices and methods of fabrication

KHAN M ASIF28 citations93
US8318562B2Nov 27, 2012

Method to increase breakdown voltage of semiconductor devices

KHAN M ASIF13 citations83

NITEK INC

2 patents
US8698191B2Apr 15, 2014

Ultraviolet light emitting diode with AC voltage operation

NITEK INC4 citations72
US8354687B1Jan 15, 2013

Efficient thermal management and packaging for group III nitride based UV devices

NITEK INC2 citations61

ADIVARAHAN VINOD

2 patents
US8680551B1Mar 25, 2014

High power ultraviolet light sources and method of fabricating the same

ADIVARAHAN VINOD4 citations70
US9142714B2Sep 22, 2015

High power ultraviolet light emitting diode with superlattice

ADIVARAHAN VINOD1 citations49

FAREED QHALID

2 patents
US8541817B2Sep 24, 2013

Multilayer barrier III-nitride transistor for high voltage electronics

FAREED QHALID2 citations60
US8227322B2Jul 24, 2012

Methods of growing nitride-based film using varying pulses

FAREED QHALID4 citations60

UNIV SOUTH CAROLINA

2 patents
US9985177B2May 29, 2018

Ultraviolet light emitting devices and methods of fabrication

UNIV SOUTH CAROLINA1 citations51
US8692293B2Apr 8, 2014

Method to increase breakdown voltage of semiconductor devices

UNIV SOUTH CAROLINA1 citations51