P

Inventor

CHANG MENG-CHUN

TW24 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MENG-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

16 patents
US9443769B2Sep 13, 2016

Wrap-around contact

TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US10651091B2May 12, 2020

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10164106B2Dec 25, 2018

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9941367B2Apr 10, 2018

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11355638B2Jun 7, 2022

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10727347B2Jul 28, 2020

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9647115B1May 9, 2017

Semiconductor structure with enhanced contact and method of manufacture the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9419141B2Aug 16, 2016

Replacement channel

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12040233B2Jul 16, 2024

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12148831B2Nov 19, 2024

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854898B2Dec 26, 2023

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362000B2Jun 14, 2022

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389667B2Aug 12, 2025

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US10115597B2Oct 30, 2018

Self-aligned dual-metal silicide and germanide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9559182B2Jan 31, 2017

Self-aligned dual-metal silicide and germanide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

3 patents

IND TECH RES INST

2 patents

HUANG YU-LIEN

1 patent

REALTEK SEMICONDUCTOR CORP

1 patent

CHANG MENG-CHUN

1 patent