Inventor

SHAMANNA VINAYAK

US14 patents

⚠️ This page may combine multiple inventors who share the name “SHAMANNA VINAYAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

13 patents

US10014309B2Jul 3, 2018

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC34 citations94

US10263007B2Apr 16, 2019

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC11 citations84

US10157933B2Dec 18, 2018

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC2 citations72

US11937429B2Mar 19, 2024

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62

US11744076B2Aug 29, 2023

Integrated assemblies, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations62

US11380705B2Jul 5, 2022

Integrated assemblies, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC1 citations62

US11239252B2Feb 1, 2022

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62

US12250812B2Mar 11, 2025

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC0 citations52

US12288585B2Apr 29, 2025

Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

MICRON TECHNOLOGY INC0 citations51

US10720446B2Jul 21, 2020

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations51

LODESTAR LICENSING GROUP LLC

1 patent

US12089403B2Sep 10, 2024

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

LODESTAR LICENSING GROUP LLC0 citations61

SHAMANNA VINAYAK

MICRON TECHNOLOGY INC

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated assemblies, and methods of forming integrated assemblies

Integrated assemblies, and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Methods used in forming a memory array comprising strings of memory cells

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

LODESTAR LICENSING GROUP LLC

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells