Inventor
STEIGERWALT MICHAEL D
US16 patents
⚠️ This page may combine multiple inventors who share the name “STEIGERWALT MICHAEL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS7118986B2Oct 10, 2006
STI formation in semiconductor device including SOI and bulk silicon regions
IBM258 citations98
US7375410B2May 20, 2008
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM17 citations92
US7115965B2Oct 3, 2006
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
IBM16 citations92
US6440807B1Aug 27, 2002
Surface engineering to prevent EPI growth on gate poly during selective EPI processing
IBM31 citations92
US6964897B2Nov 15, 2005
SOI trench capacitor cell incorporating a low-leakage floating body array transistor
IBM50 citations89
US7115463B2Oct 3, 2006
Patterning SOI with silicon mask to create box at different depths
IBM16 citations84
US7485537B2Feb 3, 2009
Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness
IBM12 citations83
US7691716B2Apr 6, 2010
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
IBM10 citations82
US7911024B2Mar 22, 2011
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM6 citations73
US6900092B2May 31, 2005
Surface engineering to prevent epi growth on gate poly during selective epi processing
IBM11 citations73
US7763518B2Jul 27, 2010
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM4 citations62
US7394131B2Jul 1, 2008
STI formation in semiconductor device including SOI and bulk silicon regions
IBM4 citations62
US6995094B2Feb 7, 2006
Method for deep trench etching through a buried insulator layer
IBM0 citations51