Inventor · disambiguated record
Young-Ki Ha
Also filed as: HA YOUNG-KI
9 granted patents·4 pending applications·310 citations·filing 2003–2008
90Inventor score
Top patents by PatentIndex Score
13 records- 0198US7351594B2Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·102 cites·29 claims
- 0297US7352021B2Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·96 cites·14 claims
- 0389US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 0478US6696328B2CMOS gate electrode using selective growth and a fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 24, 2004·24 cites·38 claims
- 0576US7218556B2Method of writing to MRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·10 cites·20 claims
- 0673US7645619B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·5 cites·19 claims
- 0773US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 0870US7582890B2Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·34 claims
- 0962US7372090B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·12 claims
- 1041US2007230242A1Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and SubstratesLEE JANG E·Filed 2007·Application pending·0 cites
- 1140US2007206411A1Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related MethodsLEE JANG E·Filed 2007·Application pending·0 cites
- 1239US2007041125A1Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1336US2006027846A1Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methodsLEE JANG-EUN·Filed 2005·Application pending·0 cites
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