Inventor
CHU CHEN-LIANG
TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHU CHEN-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9831340B2Nov 28, 2017
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US12237323B2Feb 25, 2025
Semiconductor device having improved electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10985256B2Apr 20, 2021
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10686047B2Jun 16, 2020
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12211935B2Jan 28, 2025
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024
Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538914B2Dec 27, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508845B2Nov 22, 2022
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930776B2Feb 23, 2021
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9343465B2May 17, 2016
Integrated circuit for high-voltage device protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US11916060B2Feb 27, 2024
Semiconductor device having improved electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11715734B2Aug 1, 2023
Semiconductor device having improved electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557335B2Feb 17, 2026
Transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11444169B2Sep 13, 2022
Transistor device with a gate structure having recesses overlying an interface between isolation and device regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790387B2Sep 29, 2020
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911845B2Mar 6, 2018
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10847652B2Nov 24, 2020
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10680019B2Jun 9, 2020
Selective polysilicon doping for gate induced drain leakage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276596B2Apr 30, 2019
Selective polysilicon doping for gate induced drain leakage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9601585B2Mar 21, 2017
Transistor having a wing region
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US11393809B2Jul 19, 2022
Semiconductor device having improved electrostatic discharge protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9466681B2Oct 11, 2016
Method and apparatus for forming a semiconductor gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9437494B2Sep 6, 2016
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10164037B2Dec 25, 2018
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39
TAIWAN SEMICONDUCTOR MFG
6 patentsUS7888734B2Feb 15, 2011
High-voltage MOS devices having gates extending into recesses of substrates
TAIWAN SEMICONDUCTOR MFG9 citations83
US7977743B2Jul 12, 2011
Alternating-doping profile for source/drain of a FET
TAIWAN SEMICONDUCTOR MFG5 citations73
US9070663B2Jun 30, 2015
Method and apparatus for forming a semiconductor gate
TAIWAN SEMICONDUCTOR MFG0 citations51
US8377787B2Feb 19, 2013
Alternating-doping profile for source/drain of a FET
TAIWAN SEMICONDUCTOR MFG1 citations51
US9299806B2Mar 29, 2016
High voltage drain-extended MOSFET having extra drain-OD addition
TAIWAN SEMICONDUCTOR MFG0 citations50
US9035380B2May 19, 2015
High voltage drain-extended MOSFET having extra drain-OD addition
TAIWAN SEMICONDUCTOR MFG0 citations50
CHU CHEN-LIANG
3 patentsUS8513712B2Aug 20, 2013
Method and apparatus for forming a semiconductor gate
CHU CHEN-LIANG9 citations82
US9099556B2Aug 4, 2015
Transistor having an active region with wing structure
CHU CHEN-LIANG2 citations60
US8183626B2May 22, 2012
High-voltage MOS devices having gates extending into recesses of substrates
CHU CHEN-LIANG2 citations60